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Machine translation
1. (WO2008097339) BALLISTIC DEFLECTION TRANSISTOR AND LOGIC CIRCUITS BASED ON SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/097339    International Application No.:    PCT/US2007/074254
Publication Date: 14.08.2008 International Filing Date: 24.07.2007
IPC:
H01L 29/06 (2006.01)
Applicants: UNIVERSITY OF ROCHESTER [US/US]; 518 Hylan Building, Rochester, NY 14627 (US) (For All Designated States Except US).
DIDUCK, Quentin [US/US]; (US) (For US Only).
MARGALA, Martin [CA/US]; (US) (For US Only)
Inventors: DIDUCK, Quentin; (US).
MARGALA, Martin; (US)
Agent: GREENBAUM, Michael, C.; Blank Rome LLP, The Watergate, 600 New Hampshire Avenue NW, Washington, DC 20037 (US)
Priority Data:
60/832,597 24.07.2006 US
Title (EN) BALLISTIC DEFLECTION TRANSISTOR AND LOGIC CIRCUITS BASED ON SAME
(FR) TRANSISTOR DE DÉVIATION EN RÉGIME BALISTIQUE ET CIRCUITS LOGIQUES À BASE DE CE TRANSISTOR
Abstract: front page image
(EN)A quantum well is formed in a substrate to define a hub, ports extending from the hub, and a deflective structure in the hub. Electrons move through the hub and ports according to the ballistic electron effect. Gates control the movement of the electrons, causing them to be incident on the deflective structure on one side or the other, thus controlling the direction in which they are deflected and the port through which they pass.
(FR)Une structure à puits quantique est formée dans un substrat pour définir un concentrateur, des ports partant du concentrateur, et une structure déflectrice dans le concentrateur. Les électrons traversent le concentrateur et les ports selon l'effet à électrons balistiques. Des portes contrôlent le mouvement des électrons, les faisant arriver en incidence sur un côté ou l'autre de la structure déflectrice, contrôlant ainsi la direction dans laquelle ils sont déviés et le port par lequel ils passent.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)