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1. (WO2008097321) METHOD FOR GROWING ARRAYS OF ALIGNED NANOSTRUCTURES ON SURFACES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/097321    International Application No.:    PCT/US2007/070428
Publication Date: 14.08.2008 International Filing Date: 05.06.2007
IPC:
B82B 3/00 (2006.01), B82B 1/00 (2006.01), H01L 23/48 (2006.01)
Applicants: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS [US/US]; 506 South Wright Street, Urbana, IL 61801 (US) (For All Designated States Except US).
BETTGE, Martin [DE/US]; (US) (For US Only).
BURDIN, Stephan [US/US]; (US) (For US Only).
MACLAREN, Scott [US/US]; (US) (For US Only).
PETROV, Ivan [US/US]; (US) (For US Only).
SAMMANN, Ernie [US/US]; (US) (For US Only)
Inventors: BETTGE, Martin; (US).
BURDIN, Stephan; (US).
MACLAREN, Scott; (US).
PETROV, Ivan; (US).
SAMMANN, Ernie; (US)
Agent: JONAS, Tamala, R.; Greenlee, Winner & Sullivan, P.C., 4875 Pearl East Circle, Suite 200, Boulder, CO 80301 (US)
Priority Data:
60/811,033 05.06.2006 US
Title (EN) METHOD FOR GROWING ARRAYS OF ALIGNED NANOSTRUCTURES ON SURFACES
(FR) PROCÉDÉ DE CULTURE DE MATRICES DE NANOSTRUCTURES ALIGNÉES SUR DES SURFACES
Abstract: front page image
(EN)The invention provides methods for growing an array of elongated nanostructures projecting from a surface. The nanostructures of the array are aligned substantially perpendicularly to the surface. In one aspect of the invention, the diameter of the nanostructures is between 10 nm and 200 nm. The methods of the invention can produce nanostructure growth at temperatures less than 350 degrees Celsius. Alignment of the nanostructures does not rely on epitaxial growth from a single crystal substrate, allowing a variety of substrates to be used.
(FR)La présente invention concerne des procédés de culture d'une matrice de nanostructures allongées dépassant d'une surface. Les nanostructures de la matrice sont alignées de façon essentiellement perpendiculaire à la surface. Selon un aspect de l'invention, le diamètre des nanostructures varie entre 10 et 200 nm. Les procédés de l'invention peuvent entraîner la croissance de nanostructures à des températures inférieures à 350 degrés Celsius. L'alignement des nanostructures ne repose pas sur une croissance épitaxiale à partir d'un substrat monocristallin, ce qui permet d'utiliser divers substrats.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)