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1. (WO2008096211) MEASUREMENT OF CRITICAL DIMENSIONS OF SEMICONDUCTOR WAFERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/096211    International Application No.:    PCT/IB2007/051451
Publication Date: 14.08.2008 International Filing Date: 08.02.2007
IPC:
G03F 7/20 (2006.01), H01L 21/66 (2006.01), G01N 21/95 (2006.01), H01J 37/26 (2006.01)
Applicants: FREESCALE SEMICONDUCTOR, INC. [US/US]; Austin, TX 78735 (US) (For All Designated States Except US).
ANILTURK, Onder [TR/FR]; (FR) (For US Only)
Inventors: ANILTURK, Onder; (FR)
Priority Data:
Title (EN) MEASUREMENT OF CRITICAL DIMENSIONS OF SEMICONDUCTOR WAFERS
(FR) MESURE DE DIMENSIONS CRITIQUES DE PLAQUETTES DE SILICIUM SEMI-CONDUCTRICES
Abstract: front page image
(EN)A semiconductor wafer critical dimension measurement method comprising receiving (30) an image of a site of the semiconductor wafer comprising a plurality of features, processing (34) the image to measure at least one critical dimension of at least some of the features, analysing (36) the critical dimension of each feature and determining the feature to be a non-defective feature or a defective feature, and using (38) the critical dimension of at least some of any non-defective features as a measure of the critical dimension of features of the semiconductor wafer.
(FR)Procédé de mesure de dimensions critiques d'une plaquette de silicium semi-conductrice comprenant la réception d'une image d'un site de la plaquette de silicium semi-conductrice comprenant une pluralité de motifs, le traitement de l'image de façon à mesurer au moins une dimension critique d'au moins certains des motifs, l'analyse de la dimension critique de chaque motif et la détermination, pour chaque motif, de sa défectuosité ou de sa non-défectuosité, ainsi que l'utilisation de la dimension critique d'au moins certains des motifs non défectueux en tant que mesure de la dimension critique des motifs de la plaquette de silicium semi-conductrice.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)