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Machine translation
1. (WO2008095078) STABILIZATION OF POLYMER-SILICA DISPERSIONS FOR CHEMICAL MECHANICAL POLISHING SLURRY APPLICATIONS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/095078    International Application No.:    PCT/US2008/052614
Publication Date: 07.08.2008 International Filing Date: 31.01.2008
IPC:
C09K 3/14 (2006.01)
Applicants: ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive, Danbury, Connecticut 06810 (US) (For All Designated States Except US).
BOGGS, Karl E. [US/US]; (US) (For US Only).
GILES, Jeffrey [US/US]; (US) (For US Only).
DARSILLO, Michael S. [US/US]; (US) (For US Only).
PETRUSKA, Melissa A. [US/US]; (US) (For US Only).
WRSCHKA, Peter [US/US]; (US) (For US Only)
Inventors: BOGGS, Karl E.; (US).
GILES, Jeffrey; (US).
DARSILLO, Michael S.; (US).
PETRUSKA, Melissa A.; (US).
WRSCHKA, Peter; (US)
Agent: FUIERER, Tristan A.; Moore & Van Allen PLLC, Post Office Box 13706, Research Triangle Park, North Carolina 27709 (US)
Priority Data:
60/887,435 31.01.2007 US
Title (EN) STABILIZATION OF POLYMER-SILICA DISPERSIONS FOR CHEMICAL MECHANICAL POLISHING SLURRY APPLICATIONS
(FR) STABILISATION DE DISPERSIONS POLYMÈRE-SILICE POUR APPLICATIONS DE PÂTES POUR POLISSAGE CHIMIQUE MÉCANIQUE
Abstract: front page image
(EN)Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a copper removal CMP composition, which is used to selectively remove and planarize copper, into a barrier removal CMP composition, which is used to selectively remove barrier layer material, on a single CMP platen pad.
(FR)L'invention concerne des compositions pour polissage chimique mécanique (CMP) et un procédé à plateau CMP unique pour l'élimination du cuivre et d'un matériau formant une couche barrière sur le substrat d'un dispositif microélectronique. Le procédé comprend la transformation in situ d'une composition CMP d'élimination du cuivre, qui est utilisée pour éliminer sélectivement et planariser du cuivre, en une composition CMP d'élimination d'une barrière, qui est utilisée pour éliminer sélectivement un matériau formant une couche barrière, sur un seul plateau de CMP.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)