WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2008093663) ORGANIC THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR, AND ORGANIC SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/093663    International Application No.:    PCT/JP2008/051268
Publication Date: 07.08.2008 International Filing Date: 29.01.2008
IPC:
H01L 51/40 (2006.01), H01L 21/336 (2006.01), H01L 29/786 (2006.01), H01L 51/05 (2006.01), H01L 51/30 (2006.01)
Applicants: Konica Minolta Holdings, Inc. [JP/JP]; 6-1, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1000005 (JP) (For All Designated States Except US).
OBUCHI, Reiko [JP/JP]; (JP) (For US Only).
HIRAI, Katsura [JP/JP]; (JP) (For US Only)
Inventors: OBUCHI, Reiko; (JP).
HIRAI, Katsura; (JP)
Priority Data:
2007-020757 31.01.2007 JP
Title (EN) ORGANIC THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR, AND ORGANIC SEMICONDUCTOR DEVICE
(FR) TRANSISTOR ORGANIQUE À FILM MINCE, PROCÉDÉ DE FABRICATION DU TRANSISTOR ORGANIQUE À FILM MINCE ET DISPOSITIF SEMI-CONDUCTEUR ORGANIQUE
(JA) 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス
Abstract: front page image
(EN)An organic semiconductor layer having a high positional accuracy is formed by a simple wet process by eliminating troubles due to static electricity. In a method for manufacturing an organic thin film transistor, the organic semiconductor layer is formed on a supporting body by applying an organic semiconductor solution wherein an organic semiconductor material is dissolved in an application solvent and drying the solution. The application solvent is composed of two or more types of solvents including a polar solvent having a dielectric constant of 7 or more but not more than 50.
(FR)L'invention concerne une couche semi-conductrice organique ayant une précision de position élevée, qui est formée par un procédé par voie humide simple par l'élimination des problèmes dus à l'électricité statique. Dans un procédé de fabrication d'un transistor organique à film mince, la couche semi-conductrice organique est formée sur un corps de support par application d'une solution semi-conductrice organique dans laquelle un matériau semi-conducteur organique est dissous dans un solvant d'application, et séchage de la solution. Le solvant d'application est composé de deux types de solvant ou plus, comprenant un solvant polaire ayant une constante diélectrique de 7 ou plus mais de pas plus de 50.
(JA) 簡便なウェットプロセスで、静電気による障害を防止し、位置精度の高い有機半導体層を形成する方法であって、支持体上に、有機半導体材料を塗布溶媒に溶解した有機半導体溶液を塗布・乾燥することにより有機半導体層を形成する有機薄膜トランジスタの製造方法において、該塗布溶媒が比誘電率7以上50以下である極性溶媒を含む2種類以上の溶媒からなることを特徴とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)