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1. (WO2008069255) METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND DISPLAY APPARATUS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2008/069255 International Application No.: PCT/JP2007/073529
Publication Date: 12.06.2008 International Filing Date: 29.11.2007
IPC:
H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501, JP (AllExceptUS)
OMURA, Hideyuki [JP/JP]; JP (UsOnly)
HAYASHI, Ryo [JP/JP]; JP (UsOnly)
KAJI, Nobuyuki [JP/JP]; JP (UsOnly)
YABUTA, Hisato [JP/JP]; JP (UsOnly)
Inventors:
OMURA, Hideyuki; JP
HAYASHI, Ryo; JP
KAJI, Nobuyuki; JP
YABUTA, Hisato; JP
Agent:
OKABE, Masao ; No. 602, Fuji Bldg. 2-3, Marunouchi 3-chome Chiyoda-ku, Tokyo 1000005, JP
Priority Data:
2006-32830805.12.2006JP
2007-14350330.05.2007JP
2007-27386322.10.2007JP
2007-28740105.11.2007JP
Title (EN) METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND DISPLAY APPARATUS
(FR) PROCÉDÉ DE FABRICATION DE TRANSISTOR À COUCHE MINCE UTILISANT UN SEMI-CONDUCTEUR D'OXYDE ET UN APPAREIL D'AFFICHAGE
Abstract:
(EN) A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.
(FR) La présente invention concerne un transistor à couche mince fabriqué en formant une électrode de grille sur un substrat, en formant une première couche mince isolante sur l'électrode de grille, en formant une couche semi-conductrice d'oxyde sur la première couche mince isolante avec un oxyde amorphe, en modélisant la première couche mince isolante, en modélisant la couche semi-conductrice d'oxyde, en formant une seconde couche mince isolante sur la couche semi-conductrice d'oxyde dans une atmosphère contenant un gaz d'oxydation, en modélisant la seconde couche mince isolante pour exposer une paire de régions de contact, en formant une couche d'électrode pour une électrode de source et une électrode de drain.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020090089450US20100065837