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1. WO2008065270 - METHOD OF PURIFYING METALLURGICAL SILICON BY DIRECTIONAL SOLIDIFICATION

Publication Number WO/2008/065270
Publication Date 05.06.2008
International Application No. PCT/FR2007/001818
International Filing Date 02.11.2007
Chapter 2 Demand Filed 29.08.2008
IPC
C01B 33/037 2006.1
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
02Silicon
037Purification
C30B 11/14 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
11Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
14characterised by the seed, e.g. its crystallographic orientation
C30B 29/06 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
C01B 33/037
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
037Purification
C30B 11/14
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
14characterised by the seed, e.g. its crystallographic orientation
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE [FR]/[FR] (AllExceptUS)
  • SERVANT, Florence [FR]/[FR] (UsOnly)
  • CAMEL, Denis [FR]/[FR] (UsOnly)
  • DREVET, Béatrice [FR]/[FR] (UsOnly)
Inventors
  • SERVANT, Florence
  • CAMEL, Denis
  • DREVET, Béatrice
Agents
  • HECKE, Gérard
Priority Data
060958402.11.2006FR
Publication Language French (fr)
Filing Language French (FR)
Designated States
Title
(EN) METHOD OF PURIFYING METALLURGICAL SILICON BY DIRECTIONAL SOLIDIFICATION
(FR) PROCEDE DE PURIFICATION DE SILICIUM METALLURGIQUE PAR SOLIDIFICATION DIRIGEE
Abstract
(EN) The method is used to purify metallurgical silicon (3) by directional solidification to obtain solar or photovoltaic-grade silicon (6). A crystallization step uses at least one silicon seed (2), preferably of solar grade (6) or even microelectronic grade, having, for example, a purity that is substantially equal to or greater than a predetermined purity of the solar-grade silicon (6). The silicon seed (2) which covers the bottom of the crucible can come from a previous crystallization or be made up of a silicon wafer. The use of a textured single crystal or multi-crystal seed (2) enables the crystallographic orientation of the solar-grade silicon (6). A solid metallurgical silicon intermediate layer can be arranged on the silicon seed (2) and a metallurgical silicon load (3) is arranged on the intermediate layer.
(FR) Le procédé permet de purifier du silicium métallurgique (3) par solidification dirigée pour obtenir un silicium de qualité solaire ou photovoltaïque (6). Une étape de cristallisation utilise au moins un germe (2) de silicium, de préférence de qualité solaire (6) voire microélectronique, ayant par exemple une pureté sensiblement égale ou supérieure à une pureté prédéterminée du silicium de qualité solaire (6). Le germe (2) de silicium qui tapisse le fond du creuset peut être issu d'une précédente cristallisation ou constitué par une plaquette de silicium. L'utilisation d'un germe (2) monocristallin ou multicristallin texture permet l'orientation cristallographique du silicium de qualité solaire (6). Une couche intermédiaire de silicium métallurgique solide peut être disposée sur le germe (2) de silicium et une charge de silicium métallurgique (3) est disposée sur la couche intermédiaire.
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