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1. (WO2008060584) HIGH LIGHT EXTRACTION EFFICIENCY SPHERE LED
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2008/060584 International Application No.: PCT/US2007/023968
Publication Date: 22.05.2008 International Filing Date: 15.11.2007
IPC:
H01L 33/48 (2010.01) ,H01L 33/54 (2010.01) ,H01L 33/22 (2010.01) ,H01L 33/44 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
54
having a particular shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
Applicants:
DENBAARS, Steven, P. [US/US]; US (UsOnly)
NAKAMURA, Shuji [US/US]; US (UsOnly)
MASUI, Hisashi [JP/US]; US (UsOnly)
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, 12th Floor Oakland, CA 94607, US (AllExceptUS)
JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP/JP]; 4-1-8, Honcho Kawaguchi City Saitama Prefecture 332-0012, JP (AllExceptUS)
Inventors:
DENBAARS, Steven, P.; US
NAKAMURA, Shuji; US
MASUI, Hisashi; US
Agent:
ORLER, Anthony, J.; Gates & Cooper Llp 6701 Centre Drive West, Suite 1050 Los Angeles, CA 90045, US
Priority Data:
60/866,02515.11.2006US
Title (EN) HIGH LIGHT EXTRACTION EFFICIENCY SPHERE LED
(FR) DEL SPHÉRIQUE À RENDEMENT ÉLEVÉ D'EXTRACTION DE LA LUMIÈRE
Abstract:
(EN) This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (A1, Ga, In)N combined with optimized optics for highly efficient (A1, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a sphere shaped molding.
(FR) La présente invention concerne l'extraction de la lumière d'une DEL pour des applications optoélectroniques. L'invention concerne plus particulièrement du (Al, Ga, In)N combiné à des optiques optimisées pour des applications de diodes électroluminescentes à haut rendement à base de (Al, Ga, In)N. L'invention concerne également l'utilisation d'une matière d'extraction de lumière formée à indice de réfraction élevé combinée à un moulage sphérique.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)