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1. WO2008048704 - PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES

Publication Number WO/2008/048704
Publication Date 24.04.2008
International Application No. PCT/US2007/063673
International Filing Date 09.03.2007
IPC
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
C30B 29/60
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
60characterised by shape
H01L 21/0237
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
H01L 21/02458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02455Group 13/15 materials
02458Nitrides
Applicants
  • STC.UNM [US]/[US] (AllExceptUS)
  • HERSEE, Stephen M. [GB]/[US] (UsOnly)
  • WANG, Xin (UsOnly)
  • SUN, Xinyu (UsOnly)
Inventors
  • HERSEE, Stephen M.
  • WANG, Xin
  • SUN, Xinyu
Agents
  • HSIEH, Timothy M.
Priority Data
60/780,83310.03.2006US
60/798,33708.05.2006US
60/808,15325.05.2006US
60/889,36312.02.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PULSED GROWTH OF GAN NANOWIRES AND APPLICATIONS IN GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE MATERIALS AND DEVICES
(FR) CROISSANCE PULSÉE DE NANOFILS DE GAN, ET APPLICATIONS DANS DES MATÉRIAUX DE SUBSTRAT SEMI-CONDUCTEUR DE NITRURE DU GROUPE III, ET DISPOSITIFS DE SUBSTRAT
Abstract
(EN)
Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10- 1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
(FR)
L'invention concerne des dispositifs à semi-conducteur comprenant des nanofils du groupe III-N de haute qualité (à savoir sans défauts) et des réseaux uniformes de nanofils du groupe III-N ainsi que leurs procédés de fabrication modulables, où la position, l'orientation, les caractéristiques transversales, la longueur et la cristallinité de chaque nanofil peuvent être commandées avec précision. Un mode de croissance pulsée peut être utilisé pour fabriquer les nanofils et/ou les réseaux de nanofils du groupe III-N qui ont une longueur uniforme allant d'environ 10 nanomètres (nm) à environ 1 000 microns avec des caractéristiques transversales constantes, comprenant un diamètre donné à titre d'exemple allant d'environ 10 à 1 000 nm. En outre, les structures de substrat GaN de haute qualité peuvent être formées en fusionnant la pluralité de nanofils et/ou de réseaux de nanofils GaN pour faciliter la fabrication de DEL et de lasers visibles. En outre, les structures actives de nanofils/MQW de type cœur-coquille peuvent être formées par une croissance de type cœur-coquille sur les parois latérales non polaires de chaque nanofil.
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