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1. WO2008042304 - INTERCONNECT STRUCTURE USING THROUGH WAFER VIAS AND METHOD OF FABRICATION

Publication Number WO/2008/042304
Publication Date 10.04.2008
International Application No. PCT/US2007/021014
International Filing Date 01.10.2007
IPC
H01L 21/44 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
44Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428158
H01L 23/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
CPC
B81B 2201/014
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
01Switches
012characterised by the shape
014having a cantilever fixed on one side connected to one or more dimples
B81B 2207/092
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2207Microstructural systems or auxiliary parts thereof
09Packages
091Arrangements for connecting external electrical signals to mechanical structures inside the package
092Buried interconnects in the substrate or in the lid
B81B 7/007
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems; ; Auxiliary parts of microstructural devices or systems
0032Packages or encapsulation
007Interconnections between the MEMS and external electrical signals
Applicants
  • INNOVATIVE MICRO TECHNOLOGY [US]/[US] (AllExceptUS)
  • FOSTER, John, S. [US]/[US]
  • HOVEY, Steven, H. [US]/[US]
  • RUBEL, Paul, J. [US]/[US]
  • RYBNICEK, Kimon [US]/[US]
Inventors
  • FOSTER, John, S.
  • HOVEY, Steven, H.
  • RUBEL, Paul, J.
  • RYBNICEK, Kimon
Agents
  • SPONG, Jaquelin, K.
Priority Data
11/541,77403.10.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) INTERCONNECT STRUCTURE USING THROUGH WAFER VIAS AND METHOD OF FABRICATION
(FR) STRUCTURE D'INTERCONNEXION COMPRENANT DES TROUS D'INTERCONNEXION FORMÉS À TRAVERS UNE PLAQUETTE ET PROCÉDÉ DE FABRICATION DE CETTE STRUCTURE
Abstract
(EN)
A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.
(FR)
L'invention concerne un dispositif et un procédé pour l'encapsulation hermétique d'au moins une microstructure à l'intérieur d'une cavité. Le raccordement électrique avec au moins une structure est réalisé par des trous d'interconnexion formés à travers un substrat correspondant, sur la face avant duquel est montée au moins une microstructure. Le substrat à trous d'interconnexion et une plaquette couvercle peuvent former une cavité hermétique entourant la ou les microstructures. Les trous d'interconnexion traversants sont connectés à des plots de connexion situés à l'extérieur de la cavité, au moyen d'une structure d'interconnexion formée sur la face arrière du substrat à trous d'interconnexion. Du fait qu'ils se trouvent à l'extérieur de la cavité, les plots d'interconnexion peuvent être placés à l'intérieur du périmètre de la ligne de joint formant la cavité, ce qui entraîne une réduction importante de la surface occupée par le dispositif. Les trous d'interconnexion traversants réduisent en outre la longueur du circuit entre la microstructure et la structure d'interconnexion, améliorant ainsi le transfert thermique et réduisant la perte de signaux.
Also published as
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