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1. WO2008040274 - LED SEMICONDUCTOR BODY AND USE OF AN LED SEMICONDUCTOR BODY

Publication Number WO/2008/040274
Publication Date 10.04.2008
International Application No. PCT/DE2007/001536
International Filing Date 28.08.2007
IPC
H01L 33/08 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/20 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
CPC
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 2933/0083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0083Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
H01L 33/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE] (AllExceptUS)
  • WINDISCH, Reiner [DE]/[DE] (UsOnly)
  • WIRTH, Ralph [DE]/[DE] (UsOnly)
Inventors
  • WINDISCH, Reiner
  • WIRTH, Ralph
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
102006046037.528.09.2006DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) LED-HALBLEITERKÖRPER UND VERWENDUNG EINES LED-HALBLEITERKÖRPERS
(EN) LED SEMICONDUCTOR BODY AND USE OF AN LED SEMICONDUCTOR BODY
(FR) ÉLÉMENT SEMI-CONDUCTEUR DEL ET SON UTILISATION
Abstract
(DE)
Die Erfindung beschreibt einen LED-Halbleiterkörper (1) mit mindestens einer ersten strahlungserzeugenden aktiven Schicht (31) und mindestens einer zweiten strahlungserzeugenden aktiven Schicht (32), wobei der LED-Halbleiterkörper (1) einen photonischen Kristall (6) aufweist. Ferner beschreibt die Erfindung die Verwendung eines derartigen LED-Halbleiterkörpers (1).
(EN)
The invention relates to an LED semiconductor body (1) comprising at least one first radiation-generating active layer (31), at least one second radiation-generating active layer (32), and a photonic crystal (6). The invention also relates to the use of such an LED semiconductor body (1).
(FR)
L'invention concerne un élément semi-conducteur DEL (1) comportant au moins une première couche active rayonnante (31) et au moins une deuxième couche active rayonnante (32), cet élément semi-conducteur DEL (1) étant pourvu d'un cristal photonique (6). L'invention porte également sur l'utilisation d'un élément semi-conducteur DEL (1) de ce type.
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