Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2008030574) DEFECT REDUCTION USING ASPECT RATIO TRAPPING
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2008/030574 International Application No.: PCT/US2007/019568
Publication Date: 13.03.2008 International Filing Date: 07.09.2007
IPC:
H01L 21/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants:
AMBERWAVE SYSTEMS CORPORATION [US/US]; 13 Garabedian Drive Salem, NH 03079, US (AllExceptUS)
BAI, Jie [CN/US]; US (UsOnly)
PARK, Ji-soo [KR/US]; US (UsOnly)
LOCHTEFELD, Anthony, J. [US/US]; US (UsOnly)
Inventors:
BAI, Jie; US
PARK, Ji-soo; US
LOCHTEFELD, Anthony, J.; US
Agent:
US, Natasha ; Goodwin Procter LLP Exchange Place Boston, MA 02109, US
Priority Data:
60/842,77107.09.2006US
60/873,90308.12.2006US
Title (EN) DEFECT REDUCTION USING ASPECT RATIO TRAPPING
(FR) RÉDUCTION DES DÉFAUTS PAR PIÉGEAGE BASÉ SUR LE RAPPORT DE FORME
Abstract:
(EN) Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
(FR) Selon la présente invention, des films épitaxiaux présentant un défaut d'appariement sont formés à proximité de parois latérales non cristallines. Des modes de réalisation de l'invention portent sur la formation de facettes qui guident les dislocations se produisant dans les films vers les parois latérales.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2062290