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1. WO2008023687 - SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Publication Number WO/2008/023687
Publication Date 28.02.2008
International Application No. PCT/JP2007/066162
International Filing Date 21.08.2007
IPC
H01L 29/47 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
47Schottky barrier electrodes
H01L 21/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 29/872 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
CPC
H01L 29/1608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608Silicon carbide
H01L 29/45
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
45Ohmic electrodes
H01L 29/6606
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66053of devices having a semiconductor body comprising crystalline silicon carbide
6606the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
Applicants
  • ローム株式会社 Rohm Co., Ltd. [JP]/[JP] (AllExceptUS)
  • 岡村 裕司 OKAMURA, Yuji [JP]/[JP] (UsOnly)
  • 川本 典明 KAWAMOTO, Noriaki [JP]/[JP] (UsOnly)
  • 松下 政志 MATSUSHITA, Masashi [JP]/[JP] (UsOnly)
  • 太田 真吾 OHTA, Shingo [JP]/[JP] (UsOnly)
Inventors
  • 岡村 裕司 OKAMURA, Yuji
  • 川本 典明 KAWAMOTO, Noriaki
  • 松下 政志 MATSUSHITA, Masashi
  • 太田 真吾 OHTA, Shingo
Agents
  • 吉田 稔 YOSHIDA, Minoru
Priority Data
2006-22544122.08.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
(FR) DISPOSITIF SEMI-CONDUCTEUR AU SiC ET SON PROCÉDÉ DE FABRICATION
(JA) SiC半導体素子およびその製造方法
Abstract
(EN)
Disclosed is an SiC semiconductor device (A) comprising an SiC substrate (1), an Ni silicide layer (2) formed on the lower surface of the SiC substrate, and a cathode electrode (6) in contact with the Ni silicide layer. The SiC substrate is composed of an N+ sub-wafer layer (11) and an N- epitaxial wafer layer (12). An insulating layer (3), a Schottky electrode (4) and a metal layer (5) are formed on the upper surface of the N- epitaxial wafer layer. The cathode electrode contains a metal layer in contact with the Ni silicide layer, and this metal layer is composed of a metal other than Ni.
(FR)
La présente invention concerne un dispositif semi-conducteur au SiC (A) comprenant un substrat au SiC (1), une couche de siliciure de Ni (2) disposée sur la surface inférieure du substrat au SiC, et une électrode cathodique (6) en contact avec la couche de siliciure de Ni. Le substrat au SiC est composé d'une couche sous-plaquette N+ (11) et d'une couche de plaquette épitaxique N- (12). Une couche isolante (3), une électrode de Schottky (4) et une couche métallique (5) sont disposées sur la surface supérieure de la couche de plaquette épitaxique N-. L'électrode cathodique contient une couche métallique en contact avec la couche de siliciure de Ni, et cette couche métallique est composée d'un autre métal que le Ni.
(JA)
 SiC半導体素子(A)は、SiC基板(1)と、上記SiC基板の下面に形成されたNiシリサイド層(2)と、上記Niシリサイド層に接するカソード電極(6)を備える。上記SiC基板は、N+サブウエハ層(11)およびN-エピタキシャルウエハ層(12)からなる。上記N-エピタキシャルウエハ層の上面には、絶縁層(3)、ショットキー電極(4)および金属層(5)が形成されている。上記カソード電極は、上記Niシリサイド層に接する金属層を含んでおり、この金属層は、Ni以外の金属からなる。
Also published as
Latest bibliographic data on file with the International Bureau