Processing

Please wait...

Settings

Settings

Goto Application

1. WO2008023669 - n-TYPE SEMICONDUCTOR CARBON NANOMATERIAL, METHOD FOR PRODUCING n-TYPE SEMICONDUCTOR CARBON NANOMATERIAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2008/023669
Publication Date 28.02.2008
International Application No. PCT/JP2007/066131
International Filing Date 20.08.2007
IPC
C01B 31/02 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31Carbon; Compounds thereof
02Preparation of carbon; Purification
B82B 1/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
1Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 51/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30Selection of materials
H01L 51/40 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
C01B 32/174
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
15Nano-sized carbon materials
158Carbon nanotubes
168After-treatment
174Derivatisation; Solubilisation; Dispersion in solvents
C01B 32/18
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
15Nano-sized carbon materials
18Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
C01B 32/194
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
15Nano-sized carbon materials
182Graphene
194After-treatment
Applicants
  • 富士通株式会社 FUJITSU LIMITED [JP]/[JP] (AllExceptUS)
  • 浅野 高治 ASANO, Koji [JP]/[JP] (UsOnly)
Inventors
  • 浅野 高治 ASANO, Koji
Agents
  • 服部 毅巖 HATTORI, Kiyoshi
Priority Data
PCT/JP2006/31630721.08.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) n-TYPE SEMICONDUCTOR CARBON NANOMATERIAL, METHOD FOR PRODUCING n-TYPE SEMICONDUCTOR CARBON NANOMATERIAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) Nanomatériau carboné semi-conducteur du type n, son procédé de production et procédé de fabrication d'un dispositif semi-conducteur
(JA) n型半導体カーボンナノ材料、n型半導体カーボンナノ材料の製造方法および半導体装置の製造方法
Abstract
(EN)
An n-type semiconductor carbon nanomaterial is produced. Specifically, a substance having a functional group such as an amino group or an alkyl group is mixed with an inert gas, and the mixture is reacted with a semiconductive carbon nanomaterial (1a) while being irradiated with VUV, thereby covalently bonding the amino group, the alkyl group or the like to the carbon nanomaterial (1a). The covalently bonded amino group, alkyl group or the like is an electron-donating group, and thus it forms the carbon nanomaterial (1a) into an n-type one. Since the electron-donating group is covalently bonded, there can be obtained a stable n-type semiconductor carbon nanomaterial (1) which is hardly converted into a p-type one. In addition, since the n-type semiconductor carbon nanomaterial (1) is produced by a dry process, bundling or inclusion of impurities can be suppressed. Consequently, there can be produced a uniform n-type semiconductor carbon nanomaterial (1) having high reliability and stability.
(FR)
La présente invention concerne un nanomatériau carboné semi-conducteur de type n. En particulier, une substance comportant un groupe fonctionnel tel qu'un groupement amine ou un groupe alkyle est mélangée à un gaz inerte, et le mélange est mis à réagir avec un nanomatériau carboné semi-conducteur (1a) tout en étant irradié avec des VUV, liant ainsi de manière covalente le groupement amine, le groupe alkyle ou analogue audit nanomatériau (1a). Le groupement amine, le groupe alkyle ou analogue lié de manière covalente est un groupe donneur d'électrons, et ainsi il forme ledit nanomatériau (1a) en nanomatériau de type n. Étant donné que le groupe donneur d'électrons est lié de manière covalente, on peut obtenir un nanomatériau carboné semi-conducteur de type n (1) stable qui est difficilement converti en nanomatériau de type p. En outre, étant donné que ledit nanomatériau (1) est produit par un procédé à sec, l'assemblage ou l'inclusion d'impuretés peut être supprimé. En conséquence, on peut proposer un nanomatériau carboné semi-conducteur du type n (1) uniforme présentant une fiabilité et une stabilité élevées.
(JA)
 n型半導体カーボンナノ材料を作製する。  アミノ基やアルキル基等の官能基を有する物質を不活性ガスと混合し、VUVを照射しながら、半導体性のカーボンナノ材料(1a)と反応させ、そのカーボンナノ材料(1a)にアミノ基やアルキル基等を共有結合させる。共有結合したアミノ基やアルキル基等は電子供与性基であり、カーボンナノ材料(1a)をn型にする。電子供与性基が共有結合するため、p型への変化が起きにくい安定なn型半導体カーボンナノ材料(1)が得られる。また、ドライプロセスであるため、バンドル化や不純物の混入を抑えることができる。これにより、均質で信頼性・安定性の高いn型半導体カーボンナノ材料(1)が作製される。
Latest bibliographic data on file with the International Bureau