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1. WO2008020599 - METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP

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Publication Number WO/2008/020599
Publication Date 21.02.2008
International Application No. PCT/JP2007/065902
International Filing Date 15.08.2007
IPC
H01L 21/203 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203using physical deposition, e.g. vacuum deposition, sputtering
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
C23C 14/0036
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
0021Reactive sputtering or evaporation
0036Reactive sputtering
C23C 14/0641
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
0641Nitrides
H01L 21/0237
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
H01L 21/02381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02381Silicon, silicon germanium, germanium
H01L 21/02403
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
024Group 12/16 materials
02403Oxides
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
Applicants
  • 昭和電工株式会社 SHOWA DENKO K.K. [JP]/[JP] (AllExceptUS)
  • 三木 久幸 MIKI, Hisayuki [JP]/[JP] (UsOnly)
  • 塙 健三 HANAWA, Kenzo [JP]/[JP] (UsOnly)
  • 佐々木 保正 SASAKI, Yasumasa [JP]/[JP] (UsOnly)
Inventors
  • 三木 久幸 MIKI, Hisayuki
  • 塙 健三 HANAWA, Kenzo
  • 佐々木 保正 SASAKI, Yasumasa
Agents
  • 志賀 正武 SHIGA, Masatake
Priority Data
2006-22326018.08.2006JP
2006-22326118.08.2006JP
2006-29108226.10.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF ÉLECTROLUMINESCENT COMPORTANT UN SEMI-CONDUCTEUR FORMÉ D'UN NITRURE DU GROUPE III, DISPOSITIF ÉLECTROLUMINESCENT CORRESPONDANT ET LAMPE
(JA) ＩＩＩ族窒化物化合物半導体発光素子の製造方法、及びＩＩＩ族窒化物化合物半導体発光素子、並びにランプ
front page image
Abstract
(EN)
Disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device having excellent emission characteristics at high yield. Also disclosed are a group III nitride compound semiconductor light-emitting device and a lamp. Specifically disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device, which comprises a step wherein a semiconductor layer composed of a group III nitride compound semiconductor containing Ga as a group III element is formed on a substrate (11) by sputtering. In this method, the substrate (11) and a sputtering target are arranged opposite to each other, and the distance between the substrate (11) and the sputtering target is set within the range of 20-100 mm. In addition, when the semiconductor layer is formed by sputtering, the bias value applied to the substrate (11) is set at 0.1 W/cm2 or higher. Furthermore, when the semiconductor layer is formed, the sputtering is performed while supplying nitrogen and argon into a chamber which is used for the sputtering.
(FR)
L'invention concerne un procédé de fabrication d'un dispositif électroluminescent comportant un semi-conducteur formé d'un nitrure du groupe III, ledit dispositif offrant d'excellentes caractéristiques d'émission avec un rendement élevé. L'invention concerne également un dispositif électroluminescent comportant un semi-conducteur formé d'un nitrure du groupe III ; et une lampe. L'invention concerne spécifiquement un procédé comprenant une étape de formation, par pulvérisation, d'une couche semi-conductrice composée d'un semi-conducteur formé d'un nitrure du groupe III (ledit semi-conducteur contenant du gallium Ga en tant qu'élément du groupe III) sur un substrat (11). Selon le procédé de l'invention, le substrat (11) et une cible de pulvérisation sont placés face à face, la distance les séparant étant fixée de 20 à 100 mm. De plus, lors de la formation de ladite couche semi-conductrice par pulvérisation, la polarisation appliquée au substrat (11) est fixée à 0,1 W/cm2 ou plus ; la pulvérisation permettant de former ladite couche semi-conductrice s'effectue en outre sous alimentation en azote et en argon dans une chambre réservée à la pulvérisation.
(JA)
　生産性に優れるとともに、優れた発光特性を備えたＩＩＩ族窒化物化合物半導体発光素子の製造方法、及びＩＩＩ族窒化物化合物半導体発光素子、並びにランプが提供される。そのようなＩＩＩ族窒化物化合物半導体発光素子の製造方法は、基板１１上に、ＩＩＩ族元素としてＧａを含むＩＩＩ族窒化物化合物半導体からなる半導体層をスパッタ法によって成膜する工程を含む製造方法であり、基板１１とスパッタターゲットとを対向して配置するとともに、基板１１とスパッタターゲットとの間隔を２０～１００ｍｍの範囲とする。また、半導体層をスパッタ法で成膜する際に、基板１１に印加するバイアス値を０．１Ｗ／ｃｍ２以上とする。さらに、前記半導体層を成膜する際、スパッタに用いるチャンバ内に、窒素及びアルゴンを供給してスパッタする。
Also published as
CN101506946
EP2056339
JP2008047762
JP2008047763
JP2008106316
KR1020090048590
US20090315046
Latest bibliographic data on file with the International Bureau
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