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1. WO2007149720 - SEMICONDUCTIVE DEVICE HAVING RESIST POISON ALUMINUM OXIDE BARRIER AND METHOD OF MANUFACTURE

Publication Number WO/2007/149720
Publication Date 27.12.2007
International Application No. PCT/US2007/070845
International Filing Date 11.06.2007
IPC
H01L 21/4763 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428142
461to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
4763Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers
CPC
H01L 21/02126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H01L 21/02178
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02178the material containing aluminium, e.g. Al2O3
H01L 21/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
022the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
H01L 21/02271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
H01L 21/3105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
H01L 21/31144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31144using masks
Applicants
  • TEXAS INSTRUMENTS INCORPORATED [US]/[US] (AllExceptUS)
  • DOSTALIK, William, W. [US]/[US] (UsOnly)
  • MATZ, Laura, M. [US]/[US] (UsOnly)
  • KRAFT, Robert [US]/[US] (UsOnly)
  • SOMERVELL, Mark, H. [US]/[US] (UsOnly)
Inventors
  • DOSTALIK, William, W.
  • MATZ, Laura, M.
  • KRAFT, Robert
  • SOMERVELL, Mark, H.
Agents
  • FRANZ, Warren, L.
Priority Data
11/425,01519.06.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTIVE DEVICE HAVING RESIST POISON ALUMINUM OXIDE BARRIER AND METHOD OF MANUFACTURE
(FR) Dispositif semi-conducteur doté d'une barrière d'oxyde d'aluminium résistant à un empoisonnement, et procédé de fabrication
Abstract
(EN)
The invention provides a semiconductor device (100) that comprises interlevel dielectric layers (140,145) that are located over devices. The interlevel dielectric layers have a dielectric constant (k) less than about 4.0. Interconnects are formed within or over the interlevel dielectric layers. The semiconductor device further comprises an aluminum oxide barrier located between at least one pair of the interlevel dielectric layers. The aluminum oxide barrier is substantially laterally co-extensive with the interlevel dielectric layers.
(FR)
L'invention concerne un dispositif semi-conducteur (100) qui comprend des couches diélectriques intermédiaires (140, 145) situées sur des dispositifs. Les couches diélectriques intermédiaires ont une constante diélectrique (k) inférieure à environ 4,0. Des interconnexions sont formées à l'intérieur des couches diélectriques intermédiaires ou sur celles-ci. Le dispositif semi-conducteur comprend en outre une barrière d'oxyde d'aluminium située entre au moins une paire de couches diélectriques intermédiaires. La barrière d'oxyde d'aluminium est sensiblement coextensive latéralement avec les couches diélectriques intermédiaires.
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