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1. WO2007148836 - ELECTRODE BONDING METHOD AND PART MOUNTING APPARATUS

Publication Number WO/2007/148836
Publication Date 27.12.2007
International Application No. PCT/JP2007/063063
International Filing Date 22.06.2007
IPC
H05K 3/26 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
22Secondary treatment of printed circuits
26Cleaning or polishing of the conductive pattern
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
CPC
B23K 11/0006
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
11Resistance welding; Severing by resistance heating
0006the welding zone being shielded against the influence of the surrounding atmosphere
B23K 20/10
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
20Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
10making use of vibrations, e.g. ultrasonic welding
B23K 35/38
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
38Selection of media, e.g. special atmospheres for surrounding the working area
B23K 35/383
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
38Selection of media, e.g. special atmospheres for surrounding the working area
383mainly containing noble gases or nitrogen
H01L 2221/68313
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68313Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
H01L 2224/75
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
75Apparatus for connecting with bump connectors or layer connectors
Applicants
  • PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • INAMOTO, Yoshimasa (UsOnly)
  • NAKATSUJI, Hachiro (UsOnly)
  • INOUE, Kazuhiro (UsOnly)
  • TSUJI, Hiroyuki (UsOnly)
Inventors
  • INAMOTO, Yoshimasa
  • NAKATSUJI, Hachiro
  • INOUE, Kazuhiro
  • TSUJI, Hiroyuki
Agents
  • ISHIHARA, Masaru
Priority Data
2006-17223022.06.2006JP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTRODE BONDING METHOD AND PART MOUNTING APPARATUS
(FR) PROCÉDÉ DE COLLAGE D'ÉLECTRODES DISPOSITIF DE MONTAGE DE PIÈCES
Abstract
(EN)
An electrode bonding method according to the present invention includes: a plasma cleaning step of irradiating an electrode surface (3) to be cleaned of at least either one of a part (1), such as a semiconductor device, and a substrate (10) with atmospheric pressure plasma (8) for cleaning; an inert gas atmosphere maintaining step of covering the electrode surface (3) to be cleaned and its vicinity with a first inert gas (4) before the irradiation of the atmospheric pressure plasma (8) is ended, and maintaining that state even thereafter; and a bonding step of bonding an electrode of the part (1) and an electrode on the substrate (10) before the inert gas atmosphere maintaining step is ended. The electrode surface (3) is thereby plasma-cleaned without the possibility of damaging the part (1) to be bonded to the substrate (10), and the cleaned state is maintained while bonding the electrodes to provide an electrode bonding state of high bonding force and high reliability.
(FR)
La méthode de collage d'électrodes de la présente invention englobe les opérations suivantes: nettoyage au plasma par irradiation de la surface de l'électrode à nettoyer sur au moins l'une des pièces (1) (tel qu'un dispositif à semi-conducteur), et d'un substrat (10) au moyen d'un plasma à la pression atmosphérique (8); maintien à la pression atmosphérique d'un gaz inerte recouvrant la surface de l'électrode à nettoyer et de la zone alentour au moyen d'un premier gaz inerte (4) avant arrêt de l'irradiation du plasma à la pression atmosphérique (8); prolongation de cet état; et collage de la partie (1) et d'une électrode sur le substrat (10) avant achèvement de l'opération de maintien sous atmosphère inerte. Ainsi, la surface d'électrode (3) est nettoyée au plasma sans risque d'endommagement de la pièce (1) à coller sur le substrat (10), l'état de propreté étant maintenu pendant le collage des électrodes de manière à obtenir un collage des électrodes d'une grande force et d'une fiabilité élevée.
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