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1. WO2007148601 - THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND ELECTRONIC DEVICE USING THE THIN FILM TRANSISTOR

Publication Number WO/2007/148601
Publication Date 27.12.2007
International Application No. PCT/JP2007/062026
International Filing Date 14.06.2007
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
G02F 1/136 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
G02F 2202/36
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
2202Materials and properties
36Micro- or nanomaterials
H01L 29/0665
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
H01L 29/0669
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
H01L 29/0673
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
0673oriented parallel to a substrate
Applicants
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 脇田尚英 WAKITA, Naohide (UsOnly)
Inventors
  • 脇田尚英 WAKITA, Naohide
Agents
  • 鎌田耕一 KAMADA, Koichi
Priority Data
2006-16831819.06.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND ELECTRONIC DEVICE USING THE THIN FILM TRANSISTOR
(FR) TRANSISTOR À COUCHES MINCES, PROCÉDÉ DE FABRICATION DU TRANSISTOR À COUCHES MINCES ET DISPOSITIF ÉLECTRONIQUE UTILISANT LE TRANSISTOR À COUCHES MINCES
(JA) 薄膜トランジスタおよびその製造方法ならびにそれを用いた電子機器
Abstract
(EN)
A thin film transistor includes a semiconductor layer (5); a source electrode (3s) and a drain electrode (3d) connected to the semiconductor layer (5); an insulating layer (6) formed adjacent to the semiconductor layer (5); and a gate electrode (7) facing the semiconductor layer (5) by having the insulating layer (6) in between. The semiconductor layer (5) includes an aggregate of semiconductor fine particles composed of composite oxide. The composite oxide includes at least one element selected from among a group composed of indium, gallium and rhodium, and zinc.
(FR)
Transistor à couches minces incluant une couche semi-conductrice (5) ; une électrode source (3s) et une électrode déversoir (3d) connectées à la couche semi-conductrice (5) ; une couche isolante (6) formée de façon adjacente à la couche semi-conductrice (5) ; et une électrode grille (7) faisant face à la couche semi-conductrice (5), la couche isolante (6) étant intercalée entre celles-ci. La couche semi-conductrice (5) inclut un agrégat moléculaire de particules fines semi-conductrices composées d'oxyde composite. L'oxyde composite inclut au moins un élément choisi dans le groupe comprenant l'indium, le gallium et le rhodium, et le zinc.
(JA)
 本発明の薄膜トランジスタは、半導体層5と、半導体層5に接続されたソース電極3sおよびドレイン電極3dと、半導体層5に隣接して形成された絶縁層6と、絶縁層6を挟んで半導体層5に対向するゲート電極7とを含む。半導体層5は、複合酸化物からなる半導体微粒子の集合体を含む。複合酸化物は、インジウム、ガリウムおよびロジウムからなる群より選ばれる少なくとも1つの元素と亜鉛とを含む。
Also published as
Latest bibliographic data on file with the International Bureau