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1. WO2007148160 - METHOD OF MULTI-LAYER LITHOGRAPHY

Publication Number WO/2007/148160
Publication Date 27.12.2007
International Application No. PCT/IB2006/052666
International Filing Date 20.06.2006
IPC
G03F 7/09 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
CPC
G03F 7/094
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
094Multilayer resist systems, e.g. planarising layers
Applicants
  • FREESCALE SEMICONDUCTOR, INC. [US]/[US] (AllExceptUS)
  • SPARKS, Terry [US]/[FR] (UsOnly)
Inventors
  • SPARKS, Terry
Agents
  • WHARMBY, Martin Angus
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF MULTI-LAYER LITHOGRAPHY
(FR) PROCÉDÉ DE LITHOGRAPHIE MULTICOUCHE
Abstract
(EN)
A method of patterning a first resist layer (10') according to a pattern formed in a patterned second resist layer (14') formed thereon. A first resist material (10) is first at least partially pyrolyzed so as to form a hard mask resist layer (10'). A surface of the first resist layer (10') then generally functionalized with a silicon-containing group, such as by way of silylation, so as to define a silicon-containing surface layer (12). The first resist layer (10') (including silylated surface layer 12) is then, for example, dry developed according to the pattern formed in the second resist layer to form a corresponding pattern in the hard mask layer (10'). The patterned second resist layer (14') may be, for example, about 80 nm to about 100 nm thick.
(FR)
L'invention concerne un procédé de formation de motifs sur une première couche de résist (10') conformément à un motif formé sur une seconde couche de résist à motifs (14') formée sur la première couche. Une première matière de résist (10) est tout d'abord au moins partiellement pyrolisée de façon à former une couche de résist à masque dur (10'). Une surface de la première couche de résist (10') est ensuite généralement fonctionnalisée avec un groupe contenant du silicium, tel que par silylation, de façon à définir une couche de surface (12) contenant du silicium. La première couche de résist (10') (comprenant une couche de surface silylée 12) est ensuite, par exemple, révélée à sec conformément au motif formé dans la seconde couche de résist pour obtenir un motif correspondant sur la couche de masque dur (10'). La seconde couche de résist à motifs (14') peut avoir, par exemple, une épaisseur d'environ 80 nm à environ 100 nm.
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