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1. WO2007145801 - METHOD AND APPARATUS TO DETECT FAULT CONDITIONS OF A PLASMA PROCESSING REACTOR

Publication Number WO/2007/145801
Publication Date 21.12.2007
International Application No. PCT/US2007/012581
International Filing Date 25.05.2007
IPC
C23C 14/00 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
CPC
C23C 16/509
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
509using internal electrodes
C23C 16/52
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
52Controlling or regulating the coating process
H01J 37/32935
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32917Plasma diagnostics
32935Monitoring and controlling tubes by information coming from the object and/or discharge
H01J 37/3299
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32917Plasma diagnostics
3299Feedback systems
Applicants
  • LAM RESEARCH CORPORATION [US]/[US] (AllExceptUS)
  • KEIL, Douglas [US]/[US] (UsOnly)
  • HUDSON, Eric [US]/[US] (UsOnly)
  • KIMBALL, Chris [US]/[US] (UsOnly)
  • FISCHER, Andreas [DE]/[US] (UsOnly)
Inventors
  • KEIL, Douglas
  • HUDSON, Eric
  • KIMBALL, Chris
  • FISCHER, Andreas
Agents
  • SKIFF, Peter, K.
Priority Data
11/447,94607.06.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND APPARATUS TO DETECT FAULT CONDITIONS OF A PLASMA PROCESSING REACTOR
(FR) procédé et appareil pour détecter des conditions de panne d'un réacteur de traitement au plasma
Abstract
(EN)
A method of fault detection for use in a plasma processing chamber is provided The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information Such analysis enables detection of failures such as build-up of process by-products, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement Also enabled is the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters.
(FR)
L'invention concerne un procédé de détection de panne pour utilisation dans une chambre de traitement au plasma. Le procédé consiste à surveiller les paramètres de plasma dans une chambre à plasma et analyser les informations résultantes. Une telle analyse permet la détection de pannes et le diagnostic de modes de panne dans un réacteur de traitement au plasma pendant le traitement de galettes. Le procédé consiste à mesurer les paramètres de plasma en fonction du temps et à analyser les données résultantes. Les données peuvent être observées, caractérisées, comparées à des données de référence, numérisées, traitées, ou analysées de façon quelconque pour faire apparaître une panne spécifique. La surveillance peut être réalisée avec un détecteur comme une sonde, qui est de préférence maintenu dans la chambre à plasma sensiblement coplanaire avec une surface dans la chambre, et mesure directement le flux net ionique et d'autres paramètres de plasma. Le détecteur est de préférence positionné au niveau d'une surface mise à la masse dans le réacteur comme une électrode de type pommeau de douche mise à la masse, et peut être de type sonde de flux ionique plan (PIF) ou de type non capacitif. Les pannes de chambre qui peuvent être détectées comportent l'accumulation de produits dérivés de processus dans la chambre de traitement, une fuite d'hélium, un événement de resyntonisation d'appariement, une vitesse de stabilisation médiocre, et une perte de confinement de plasma. Si le détecteur est une sonde, la sonde peut être intégrée dans une partie d'une chambre de traitement au plasma et comprendre un ou plusieurs trous traversants d'injection de gaz.
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