Processing

Please wait...

Settings

Settings

Goto Application

1. WO2007145710 - REFRESHING A PHASE CHANGE MEMORY

Note: Text based on automatic Optical Character Recognition processes. Please use the PDF version for legal matters

[ EN ]

1. A method comprising:
refreshing a phase change memory.

2. The method of claim 1 including refreshing at periodic intervals.

3. The method of claim 1 including refreshing upon the detection of an event.

4. The method of claim 1 including programming the set state in less than 10 nanoseconds.

5. A phase change memory comprising:
a chalcogenide layer;
opposed contacts across said chalcogenide layer; and
a circuit to provide refresh signals to a programmed phase change memory.

6. The memory of claim 5 wherein said circuit provides a refresh at periodic intervals.

7. The memory of claim 5 wherein said circuit provides a refresh upon detection of an event.

8. The memory of claim 5 wherein said chalcogenide layer programs the set state in 10 nanoseconds or less.

9. A phase change memory comprising:
a chalcogenide layer that programs the set state in 10 nanoseconds or less; and opposed contacts across said chalcogenide layer.

10. The memory of claim 9 including a circuit to provide refresh signals to the programmed phase change memory.

11. The memory of claim 10 wherein said circuit provides a refresh at periodic intervals.

12. The memory of claim 10 wherein said circuit provides a refresh upon detection of an event.

13. The memory of claim 9 wherein said layer has an archival life at 5O0C of at least two years.

14. A system comprising:
a processor; and
a phase change memory coupled to said processor, said memory including a chalcogenide layer and a circuit to provide refresh signals to a programmed phase change memory.

15. The system of claim 14 wherein said circuit provides a refresh at periodic intervals.

16. The system of claim 14 wherein said circuit provides a refresh upon detection of an event.

17. The system of claim 14 wherein said chalcogenide layer programs the set state in 10 nanoseconds or less.