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1. WO2007145710 - REFRESHING A PHASE CHANGE MEMORY

Publication Number WO/2007/145710
Publication Date 21.12.2007
International Application No. PCT/US2007/009864
International Filing Date 24.04.2007
IPC
G11C 16/02 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
G11C 13/0004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0004comprising amorphous/crystalline phase transition cells
G11C 13/0033
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0033Disturbance prevention or evaluation; Refreshing of disturbed memory data
G11C 13/0069
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
G11C 16/3431
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
3418Disturbance prevention or evaluation; Refreshing of disturbed memory data
3431Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
G11C 2013/0078
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
0078Write using current through the cell
G11C 2207/229
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2207Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
22Control and timing of internal memory operations
229Timing of a write operation
Applicants
  • OVONYX, INC. [US]/[US] (AllExceptUS)
  • HUDGENS, Stephen, J. [US]/[US] (UsOnly)
Inventors
  • HUDGENS, Stephen, J.
Agents
  • TROP, Timothy, N.
Priority Data
11/447,82106.06.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) REFRESHING A PHASE CHANGE MEMORY
(FR) RAFRAÎCHISSEMENT D'UNE MÉMOIRE À CHANGEMENT DE PHASE
Abstract
(EN)
A phase change memory may be utilized in place of a dynamic random access memory in a processor-based system. In some embodiments, a chalcogenide material, used for the phase change memory, has relatively high crystallization speed so that it may be quickly programmed. Materials may be chosen which have high crystallization speed and corresponding poor data retention. The poor data retention may be compensated by providing a refresh cycle.
(FR)
La présente invention concerne une mémoire à changement de phase pouvant être utilisée à la place d'une mémoire vive dynamique dans un système à base de processeurs. Dans certains modes de réalisation, un matériau à base de chalcogénure, utilisé pour la mémoire à changement de phase, possède une vitesse de cristallisation relativement rapide de sorte qu'il peut être rapidement programmé. On peut choisir des matériaux possédant une vitesse de cristallisation élevée et une rétention de données correspondante qui est médiocre. La rétention de données médiocre peut être compensée en fournissant un cycle de rafraîchissement.
Also published as
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