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1. WO2007145070 - PLACING TABLE STRUCTURE AND HEAT TREATMENT APPARATUS

Publication Number WO/2007/145070
Publication Date 21.12.2007
International Application No. PCT/JP2007/060778
International Filing Date 28.05.2007
IPC
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/46 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H05B 3/06 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
02Details
06Heater elements structurally combined with coupling elements or with holders
H05B 3/20 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
H05B 3/74 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
68Heating arrangements specially adapted for cooking plates or analogous hot-plates
74Non-metallic plates
CPC
C23C 16/4581
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4581characterised by material of construction or surface finish of the means for supporting the substrate
C23C 16/48
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
48by irradiation, e.g. photolysis, radiolysis, particle radiation
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67103
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67103mainly by conduction
H05B 3/143
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
3Ohmic-resistance heating
10Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
12characterised by the composition or nature of the conductive material
14the material being non-metallic
141Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
143applied to semiconductors, e.g. wafers heating
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • 小松 智仁 KOMATSU, Tomohito [JP]/[JP] (UsOnly)
Inventors
  • 小松 智仁 KOMATSU, Tomohito
Agents
  • 吉武 賢次 YOSHITAKE, Kenji
Priority Data
2006-16757616.06.2006JP
2007-08194927.03.2007JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLACING TABLE STRUCTURE AND HEAT TREATMENT APPARATUS
(FR) STRUCTURE DE TABLE DE PLACEMENT ET APPAREIL DE TRAITEMENT THERMIQUE
(JA) 載置台構造及び熱処理装置
Abstract
(EN)
Provided is a placing table structure having a replaceable heating plate by removably arranging the heating plate in a heating plate storing chamber. A placing table structure (29) is provided with a placing table (32), which is arranged inside a processing chamber (4) and places a subject (W) to be treated, for performing prescribed heat treatment to the subject, and a cylindrical supporting column (30) which supports the placing table by making the placing table stand from the bottom portion of the processing chamber. The placing table (32) is provided with a heating plate (40) having a heating body (38) composed of an electrical heating source embedded in a heat resistant material, and a heating plate storing chamber (42) composed of a heat resistant anticorrosive material for removably storing the heating plate. The heating plate storing chamber (42) includes a chamber main body (76) having an opening, and a cover section (78) attached to the chamber main body (76). Thus, the heating plate (40) is permitted to be replaced.
(FR)
La présente invention concerne une structure de table de placement ayant une plaque chauffante remplaçable en disposant de manière amovible la plaque chauffante dans une chambre de stockage de la plaque chauffante. Une structure de table de placement (29) est prévue avec une table de placement (32), laquelle est disposée à l'intérieur d'une chambre de traitement (4) et met en place un sujet (W) à traiter, pour réaliser un traitement thermique prescrit au sujet, et une colonne de soutien cylindrique (30) qui soutient la table de placement en faisant s'élever la table de placement à partir de la partie inférieure de la chambre de traitement. La table de placement (32) est prévue avec une plaque chauffante (40) ayant un corps chauffant (38) composé d'une source de chauffage électrique incrustée dans un matériau résistant à la chaleur, et une chambre de stockage de la plaque chauffante (42) composée d'un matériau anticorrosif résistant à la chaleur pour le stockage amovible de la plaque chauffante. La chambre de stockage de la plaque chauffante (42) comprend un corps de chambre principal (76) ayant une ouverture, et une section de couvercle (78) fixée au corps de chambre principal (76). Ainsi, la plaque chauffante (40) peut être remplacée.
(JA)
not available
Also published as
KR1020087030562
US12336207
Latest bibliographic data on file with the International Bureau