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1. WO2007143743 - HIGH VOLUME DELIVERY SYSTEM FOR GALLIUM TRICHLORIDE

Publication Number WO/2007/143743
Publication Date 13.12.2007
International Application No. PCT/US2007/070721
International Filing Date 08.06.2007
IPC
C30B 29/40 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds
C30B 25/02 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
CPC
C30B 25/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
C30B 25/165
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
16Controlling or regulating
165the flow of the reactive gases
C30B 29/40
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C30B 29/403
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
C30B 29/406
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
406Gallium nitride
Applicants
  • S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES [FR]/[FR] (AllExceptUS)
  • ARENA, Chantal [US]/[US] (UsOnly)
  • WERKHOVEN, Christiaan [NL]/[US] (UsOnly)
  • STEIDL, Thomas, Andrew [US]/[US] (UsOnly)
  • BIRTCHER, Charles, Michael [US]/[US] (UsOnly)
  • CLARK, Robert, Daniel [US]/[US] (UsOnly)
Inventors
  • ARENA, Chantal
  • WERKHOVEN, Christiaan
  • STEIDL, Thomas, Andrew
  • BIRTCHER, Charles, Michael
  • CLARK, Robert, Daniel
Agents
  • FANUCCI, Allan, A.
Priority Data
60/812,56009.06.2006US
60/866,96522.11.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HIGH VOLUME DELIVERY SYSTEM FOR GALLIUM TRICHLORIDE
(FR) SYSTÈME D'ADMINISTRATION EN GRAND VOLUME DE TRICHLORURE DE GALLIUM
Abstract
(EN)
The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods and equipment are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the precursor is provided at a mass flow of at least 50g Group III element/hour for a time of at least 48 hours to facilitate high volume manufacture of the semiconductor material. Advantageously, the mass flow of the gaseous Group III precursor is controlled to deliver the desired amount.
(FR)
La présente invention a trait au champ des équipements et procédés de traitement semi-conducteur et fournit, en particulier, des procédés et équipements pour la production soutenue en grand volume de matériau semi-conducteur de composé de groupe III-V convenant à la fabrication de composants optiques et électroniques, pour utilisation comme substrats pour déposition épitaxiale, pour galettes et ainsi de suite. Dans des modes de réalisation préférés, ces procédés et équipements sont optimisés pour la fabrication de galettes semi-conductrices de composé de groupe III-N (azote) et spécifiquement pour la production de galettes GaN. Spécifiquement, le précurseur est acheminé selon un débit massique d'au moins 50g d'élément de groupe III/heure pendant au moins 48 heures pour faciliter la fabrication en grand volume du matériau semi-conducteur. Avantageusement, le débit massique du précurseur de groupe III gazeux est régulé pour délivrer la quantité désirée.
Latest bibliographic data on file with the International Bureau