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1. WO2007143073 - DOPED PLUG FOR CCD GAPS

Publication Number WO/2007/143073
Publication Date 13.12.2007
International Application No. PCT/US2007/012905
International Filing Date 31.05.2007
IPC
H01L 21/339 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
339Charge transfer devices
H01L 29/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
762Charge transfer devices
765Charge-coupled devices
768with field effect produced by an insulated gate
CPC
G11C 19/282
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
19Digital stores in which the information is moved stepwise, e.g. shift register
28using semiconductor elements
282with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
G11C 19/285
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
19Digital stores in which the information is moved stepwise, e.g. shift register
28using semiconductor elements
282with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
H01L 29/66954
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66946Charge transfer devices
66954with an insulated gate
H01L 29/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
762Charge transfer devices
765Charge-coupled devices
768with field effect produced by an insulated gate
Applicants
  • KENET, INC. [US]/[US] (AllExceptUS)
  • WASHKURAK, William, D. [CA]/[US] (UsOnly)
  • ANTHONY, Michael, P. [US]/[US] (UsOnly)
  • SOLLNER, Gerhard [US]/[US] (UsOnly)
Inventors
  • WASHKURAK, William, D.
  • ANTHONY, Michael, P.
  • SOLLNER, Gerhard
Agents
  • THIBODEAU, JR, David, J.
Priority Data
60/809,77331.05.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DOPED PLUG FOR CCD GAPS
(FR) CONNECTEUR DOPÉ POUR ESPACES CCD
Abstract
(EN)
A method and structure of providing a doped plug to improve the performance of CCD gaps is discussed. A highly-doped region is implemented in a semiconductor, aligned beneath a gap. The plug provides a highly-conductive region at the semiconductor surface, therefore preventing the development of a region where potential is significantly influenced by surface charges.
(FR)
La présente invention concerne un procédé et une structure servant à réaliser un connecteur dopé pour améliorer la performance d'espaces CCD. Une zone hautement dopée est implémentée dans un semi-conducteur, alignée sous un espace. Le connecteur comporte une zone hautement conductrice à la surface semi-conductrice, empêchant ainsi le développement d'une zone où le potentiel est significativement influencé par les charges de surface.
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