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1. WO2007142852 - PRODUCING SOI STRUCTURE USING ION SHOWER

Publication Number WO/2007/142852
Publication Date 13.12.2007
International Application No. PCT/US2007/012360
International Filing Date 24.05.2007
IPC
H01L 21/762 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
76Making of isolation regions between components
762Dielectric regions
CPC
H01L 21/187
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
185Joining of semiconductor bodies for junction formation
187by direct bonding
Applicants
  • CORNING INCORPORATED [US]/[US] (AllExceptUS)
  • CITES, Jeffrey, S. [US]/[US] (UsOnly)
  • GADKAREE, Kishor, P. [US]/[US] (UsOnly)
  • MASCHMEYER, Richard, O. [US]/[US] (UsOnly)
Inventors
  • CITES, Jeffrey, S.
  • GADKAREE, Kishor, P.
  • MASCHMEYER, Richard, O.
Agents
  • SCOTT, Steven, J.
Priority Data
11/445,03631.05.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PRODUCING SOI STRUCTURE USING ION SHOWER
(FR) PRODUCTION D'UNE STRUCTURE SOI EN UTILISANT UNE DOUCHE IONIQUE
Abstract
(EN)
Disclosed are methods for making SOI and SOG structures using ion shower for implanting ions to the donor substrate. The ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
(FR)
L'invention concerne des procédés permettant la fabrication de structures SOI et SOG en utilisant une douche ionique pour implanter des ions dans le substrat donneur. La douche ionique permet de réaliser une implantation d'ions appropriée, efficace, peu coûteuse et effective tout en minimisant l'endommagement du film d'exfoliation.
Latest bibliographic data on file with the International Bureau