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1. WO2007142265 - MAGNETRON SPUTTERING MAGNET ASSEMBLY, MAGNETRON SPUTTERING DEVICE, AND MAGNETRON SPUTTERING METHOD

Publication Number WO/2007/142265
Publication Date 13.12.2007
International Application No. PCT/JP2007/061454
International Filing Date 06.06.2007
IPC
C23C 14/35 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
CPC
C23C 14/35
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
H01J 37/3408
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3402using supplementary magnetic fields
3405Magnetron sputtering
3408Planar magnetron sputtering
H01J 37/3455
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
345Magnet arrangements in particular for cathodic sputtering apparatus
3455Movable magnets
Applicants
  • 芝浦メカトロニクス株式会社 SHIBAURA MECHATRONICS CORPORATION [JP]/[JP] (AllExceptUS)
  • 宇都宮 信明 UTSUNOMIYA, Nobuaki [JP]/[JP] (UsOnly)
  • 伊藤 昭彦 ITO, Akihiko [JP]/[JP] (UsOnly)
Inventors
  • 宇都宮 信明 UTSUNOMIYA, Nobuaki
  • 伊藤 昭彦 ITO, Akihiko
Agents
  • 日向寺 雅彦 HYUGAJI, Masahiko
Priority Data
2006-15956508.06.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MAGNETRON SPUTTERING MAGNET ASSEMBLY, MAGNETRON SPUTTERING DEVICE, AND MAGNETRON SPUTTERING METHOD
(FR) ensemble aimant de pulvérisation cathodique à magnétron, dispositif de pulvérisation cathodique à magnétron, et procédé de pulvérisation cathodique à magnétron
(JA) マグネトロンスパッタ用磁石装置、マグネトロンスパッタ装置及びマグネトロンスパッタ方法
Abstract
(EN)
A magnetron sputtering magnet assembly movable generally parallel to the sputtered surface of a target while facing the target, characterized in that it comprises an inner magnet which extends generally perpendicularly to the movement direction and whose N or S pole faces the target, an outer magnet which surrounds the inner magnet with a spacing from each other and whose magnetic pole opposite to that of the inner magnet faces the target, and a nonmagnetic member which is provided between the inner and outer magnets and holds the inner and outer magnets and that each of the magnetic poles facing the target is reversible. Since variation of the electron density at the end of the target is suppressed, the plasma density in the portion becomes uniform. With this, the sputtering rate at the end of the target becomes uniform and variation in deposition distribution on the object to be sputtered is suppressed. Variation of the target erosion is small and the target use efficiency is increased.
(FR)
L'invention concerne un ensemble aimant de pulvérisation cathodique à magnétron mobile généralement parallèle à la surface de pulvérisation d'une cible tout en faisant face à la cible, caractérisé en ce qu'il comprend un aimant interne qui s'étend généralement de manière perpendiculaire au sens du mouvement et dont le pôle N ou S fait face à la cible, un aimant externe qui entoure l'aimant interne avec un espacement les séparant et dont le pôle magnétique opposé de celui de l'aimant interne fait face à la cible, et un élément non magnétique qui est disposé entre les aimants interne et externe et maintient les aimants interne et externe et en ce que chacun des pôles magnétiques faisant face à la cible est réversible. Comme la variation de densité d'électrons à l'extrémité de la cible est supprimée, la densité de plasma dans la partie devient uniforme. De ce fait, le débit de pulvérisation cathodique à l'extrémité de la cible devient uniforme et la variation de distribution de déposition sur l'objet à pulvériser est supprimée. La variation de l'érosion de cible est faible et l'efficacité d'utilisation de la cible est augmentée.
(JA)
 本発明のマグネトロンスパッタ用磁石装置は ターゲットに対向した状態で前記ターゲットの被スパッタ面に対して略平行な方向に移動可能なマグネトロンスパッタ用磁石装置であって、前記移動の方向に対して略垂直な方向に延在し、N極またはS極が前記ターゲットに対向される内側磁石と、前記内側磁石から離間して前記内側磁石を囲み、前記内側磁石とは逆の磁極が前記ターゲットに対向される外側磁石と、前記内側磁石と前記外側磁石との間に設けられ、前記内側磁石及び前記外側磁石を保持する非磁性部材と、を備え、前記内側磁石及び前記外側磁石のそれぞれにおいて前記ターゲットに対向する磁極が反転可能に設けられたことを特徴とする。ターゲットの端における電子密度のばらつきを抑制して、その部分のプラズマ密度の均一化を図れる。これにより、ターゲット端におけるスパッタレートの均一化が図れ、成膜対象物への成膜分布のばらつきを抑制することができる。また、ターゲットエロージョンのばらつきも小さくして、ターゲットの利用効率を向上できる。
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