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1. WO2007141851 - SEMICONDUCTOR PACKAGE AND ELECTRONIC APPARATUS

Publication Number WO/2007/141851
Publication Date 13.12.2007
International Application No. PCT/JP2006/311423
International Filing Date 07.06.2006
IPC
H01L 23/36 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
CPC
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/73204
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73201on the same surface
73203Bump and layer connectors
73204the bump connector being embedded into the layer connector
H01L 2224/73253
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73251on different surfaces
73253Bump and layer connectors
H01L 23/3733
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3733having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
H01L 2924/09701
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
095with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
097Glass-ceramics, e.g. devitrified glass
09701Low temperature co-fired ceramic [LTCC]
Applicants
  • 富士通株式会社 FUJITSU LIMITED [JP]/[JP] (AllExceptUS)
  • 小出 正輝 KOIDE, Masateru [JP]/[JP] (UsOnly)
Inventors
  • 小出 正輝 KOIDE, Masateru
Agents
  • 青木 篤 AOKI, Atsushi
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR PACKAGE AND ELECTRONIC APPARATUS
(FR) BOÎTIER À SEMI-CONDUCTEURS ET APPAREIL ÉLECTRONIQUE
(JA) 半導体パッケージ及び電子装置
Abstract
(EN)
A semiconductor package whose durability against heat generation of a semiconductor is increased and whose heat radiation characteristics are enhanced. The semiconductor package has a package substrate for installing the semiconductor device, a heat spreader joined to the surface of the semiconductor device and having a heat expansion coefficient equal to or less than that of the package substrate, a metal layer provided at the joint surface between the heat spreader and the semiconductor device, and a solder layer for joining the heat spreader to the semiconductor device.
(FR)
La présente invention concerne un boîtier à semi-conducteurs dont la durabilité par rapport à la génération de chaleur d'un semi-conducteur est augmentée et dont les caractéristiques de radiation de chaleur sont améliorées. Le boîtier à semi-conducteurs possède un substrat de boîtier pour installer le dispositif à semi-conducteurs, un système de répartition de la chaleur joint à la surface du dispositif à semi-conducteurs et ayant un coefficient d'expansion à la chaleur égal ou inférieur à celui du substrat de boîtier, une couche de métal prévue sur la surface jointe entre le système de répartition de la chaleur et le dispositif à semi-conducteurs et une couche de soudure pour joindre le système de répartition de la chaleur sur le dispositif à semi-conducteurs.
(JA)
 本発明は、半導体デバイスの発熱に対する耐久性を向上しつつ放熱特性を向上させた半導体パッケージを提供する。本発明に係る半導体パッケージは、半導体デバイスを取り付けるパッケージ基板と、半導体デバイスの表面上に接合され、パッケージ基板の熱膨張係数値以下の熱膨張係数値を有するヒートスプレッダと、ヒートスプレッダの半導体デバイスとの接合面に設けられる金属層と、金属層と半導体デバイスの間に形成され、ヒートスプレッダを半導体デバイスに接合する半田層とを有する。
Also published as
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