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1. WO2007138893 - POSITIVE RESIST COMPOSITION AND METHOD FOR FORMATION OF RESIST PATTERN

Publication Number WO/2007/138893
Publication Date 06.12.2007
International Application No. PCT/JP2007/060249
International Filing Date 18.05.2007
IPC
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/0045
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0045with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
G03F 7/0397
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
0397the macromolecular compound having an alicyclic moiety in a side chain
Y10S 430/111
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
430Radiation imagery chemistry: process, composition, or product thereof
1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
1055Radiation sensitive composition or product or process of making
106Binder containing
111Polymer of unsaturated acid or ester
Applicants
  • 東京応化工業株式会社 TOKYO OHKA KOGYO CO., LTD. [JP]/[JP] (AllExceptUS)
  • 竹下 優 TAKESHITA, Masaru [JP]/[JP] (UsOnly)
  • 渡部 良司 WATANABE, Ryoji [JP]/[JP] (UsOnly)
Inventors
  • 竹下 優 TAKESHITA, Masaru
  • 渡部 良司 WATANABE, Ryoji
Agents
  • 棚井 澄雄 TANAI, Sumio
Priority Data
2006-14528525.05.2006JP
2006-24429308.09.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POSITIVE RESIST COMPOSITION AND METHOD FOR FORMATION OF RESIST PATTERN
(FR) COMPOSITION DE RÉSIST POSITIF ET PROCÉDÉ DE FORMATION D'UN MOTIF DE RÉSIST
(JA) ポジ型レジスト組成物およびレジストパターン形成方法
Abstract
(EN)
Disclosed is a positive resist composition, which comprises: a resin component (A) whose alkali solubility can be improved by the action of an acid; and an acid-generator component (B) which can generate an acid upon being exposed to light, wherein the resin component (A) has a constituent unit (a0-1) represented by the general formula (a0-1) and a constituent unit (a0-2) represented by the general formula (a0-2) [in the general formulae, R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; Y1 and Y3 independently represent an aliphatic cyclic group; Z represents either a group containing a tertiary alkyl group or an alkoxyalkyl group; a represents an integer ranging from 1 to 3 and b represents an integer ranging from 0 to 2, provided that a and b satisfy the following requirement: a + b = 1-3; c, d and e independently represent an integer ranging from 0 to 3; h represents an integer ranging from 0 to 3; and i represents an integer ranging from 1 to 3. (a0-1) (a0-2)
(FR)
L'invention concerne une composition de résist positif qui comporte un composant de résine (A) dont la solubilité en milieu alcalin peut être améliorée par l'action d'un acide ; un composant générateur d'acide (B) qui peut générer un acide en étant exposé à la lumière, le composant de résine (A) ayant une unité de constituant (a0-1) représenté par la formule générale (a0-1) et une unité de constituant (a0-2) représenté par la formule générale (a0-2) [dans les formules générales, R représente un atome d'hydrogène, un atome d'halogène, un groupe alkyle inférieur ou un groupe alkyle inférieur halogéné, Y1 et Y3 représentent indépendamment un groupe cyclique aliphatique ; Z représente soit un groupe contenant un groupe alkyle tertiaire soit un groupe alcoxyalkyle ; a représente un entier de 1 à 3 et b représente un entier de 0 à 2, à la condition que a et b satisfassent l'exigence suivante : a +b = 1-3 ; c, d et e représentent indépendamment un entier e de 0 à 3 ; h représente un entier de 0 à 3 ; et i représente un entier de 1 à 3. (a0-1) (a0-2)
(JA)
 ポジ型レジスト組成物であって、酸の作用によりアルカリ可溶性が増大する樹脂成分(A)と、露光により酸を発生する酸発生剤成分(B)とを含有し、前記樹脂成分(A)が、下記一般式(a0-1)で表される構成単位(a0-1)と、下記一般式(a0-2)で表される構成単位(a0-2)とを有する[Rは水素原子、ハロゲン原子、低級アルキル基またはハロゲン化低級アルキル基;Y、Yは脂肪族環式基;Zは第3級アルキル基含有基またはアルコキシアルキル基;aは1~3の整数、bは0~2の整数、かつa+b=1~3;c、d、eは0~3の整数;g、hは0~3の整数;iは1~3の整数]。
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