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1. WO2007137508 - POLISHING SLURRY FOR SUBTLE SURFACE PLANARIZATION AND ITS USING METHOD

Publication Number WO/2007/137508
Publication Date 06.12.2007
International Application No. PCT/CN2007/001696
International Filing Date 24.05.2007
IPC
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/1463
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
1454Abrasive powders, suspensions and pastes for polishing
1463Aqueous liquid suspensions
C23F 3/06
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
3Brightening metals by chemical means
04Heavy metals
06with acidic solutions
H01L 21/31053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
31051Planarisation of the insulating layers
31053involving a dielectric removal step
H01L 21/3212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
32115Planarisation
3212by chemical mechanical polishing [CMP]
Applicants
  • 安集微电子(上海)有限公司 ANJI MICROELECTRONICS (SHANGHAI) CO., LTD [CN]/[CN] (AllExceptUS)
  • 陈国栋 CHEN, Jery, Guodong [CN]/[CN] (UsOnly)
  • 王淑敏 WANG, Shumin [CN]/[CN] (UsOnly)
  • 俞昌 YU, Chris, Chang [CN]/[CN] (UsOnly)
  • 宋伟红 SONG, Peter, Weihong [CN]/[CN] (UsOnly)
  • 顾元 GU, Yuan [CN]/[CN] (UsOnly)
Inventors
  • 陈国栋 CHEN, Jery, Guodong
  • 王淑敏 WANG, Shumin
  • 俞昌 YU, Chris, Chang
  • 宋伟红 SONG, Peter, Weihong
  • 顾元 GU, Yuan
Agents
  • 上海翰鸿律师事务所 HANHONG LAW FIRM
Priority Data
200610026938.626.05.2006CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) POLISHING SLURRY FOR SUBTLE SURFACE PLANARIZATION AND ITS USING METHOD
(FR) SUSPENSION DE POLISSAGE POUR PLANARISATION FINE DE SURFACES ET PROCÉDÉ D'UTILISATION ASSOCIÉ
(ZH) 用于精细表面平整处理的抛光液及其使用方法
Abstract
(EN)
A polishing slurry for subtle surface planarization and its using method are disclosed. The present polishing slurry for subtle surface planarization includes abrasive and water, it is characterized in that the abrasive is a colloidal Al-doped silica abrasive, this colloidal Al-doped silica abrasive is an aqueous dispersion of Al-doped silica. When using the present polishing slurry for subtle surface planarization in CMP process, the downward pressure is 0.5-3psi. The present polishing slurry for subtle surface –planarization can effectively polish Ta, TaN, TEOS, FSG, BD or other lower dielectric material and so on, and the polishing rate for lower dielectric material can be increased by two times, while excellent planarization effect can be obtained.
(FR)
L'invention concerne une suspension de polissage pour planarisation fine de surfaces, et un procédé d'utilisation associé. La suspension de polissage pour planarisation fine de surfaces selon l'invention contient un abrasif et de l'eau, et est caractérisée en ce que l'abrasif est un abrasif de silice dopée à l'aluminium colloïdale qui se présente sous la forme d'une dispersion aqueuse de silice dopée à l'aluminium. Lors de l'utilisation de la suspension de polissage pour planarisation fine de surfaces selon l'invention, la pression vers le bas est comprise entre 0,5 et 3 psi. La suspension de polissage pour planarisation fine de surfaces selon l'invention permet de polir efficacement des matériaux Ta, TaN, TEOS, FSG, BD et d'autres matériaux à constante diélectrique inférieure, et de doubler la vitesse de polissage du matériau à constante diélectrique inférieure, tout en assurant un effet de planarisation excellent.
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