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1. (WO2007111348) SUBSTRATE TREATING APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2007/111348 International Application No.: PCT/JP2007/056609
Publication Date: 04.10.2007 International Filing Date: 28.03.2007
IPC:
H01L 21/318 (2006.01) ,H01L 21/31 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
318
composed of nitrides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
Applicants:
奥田 和幸 OKUDA, Kazuyuki [JP/JP]; JP (UsOnly)
水野 謙和 MIZUNO, Norikazu [JP/JP]; JP (UsOnly)
株式会社日立国際電気 HITACHI KOKUSAI ELECTRIC INC. [JP/JP]; 〒1018980 東京都千代田区外神田四丁目14番1号 Tokyo 14-1, Sotokanda 4-chome, Chiyoda-ku, Tokyo 1018980, JP (AllExceptUS)
Inventors:
奥田 和幸 OKUDA, Kazuyuki; JP
水野 謙和 MIZUNO, Norikazu; JP
Agent:
荒船 博司 ARAFUNE, Hiroshi; 〒1620832 東京都新宿区岩戸町18番地 日交神楽坂ビル5階 光陽国際特許法律事務所内 Tokyo c/o KOYO INTERNATIONAL PATENT AND LAW FIRM, 5F., Nikko Kagurazaka Bldg., 18 Iwatocho, Shinjuku-ku Tokyo 1620832, JP
Priority Data:
2006-08819228.03.2006JP
Title (EN) SUBSTRATE TREATING APPARATUS
(FR) appareil de traitement de substrat
(JA) 基板処理装置
Abstract:
(EN) A substrate treating apparatus comprising a treating space being a space for substrate treatment; a heating member for heating the treating space; a gas supply member for feeding at least first and second treating gases to the treating space; an evacuation member for evacuating the atmosphere from the treating space; and a control member for controlling at least the gas supply member and the evacuation member, which control member in the forming of a desired film on the substrate controls so as to realize multiple alternate repetitions of supply and evacuation of the treating gases while avoiding mixing of the first and second treating gases in the treating space and in the coating of the inner wall surface of the treating space with a desired film controls so as to simultaneously supply the first and second treating gases to the treating space.
(FR) L'invention concerne un appareil de traitement de substrat comprenant un espace de traitement en tant qu'espace de traitement de substrat ; un élément de chauffage pour chauffer l'espace de traitement ; un élément d'alimentation en gaz pour alimenter au moins des premier et second gaz de traitement vers l'espace de traitement ; un élément d'évacuation pour évacuer l'atmosphère provenant de l'espace de traitement ; et un élément de commande pour commander au moins l'élément d'alimentation en gaz et l'élément d'évacuation, lequel élément de commande dans la formation d'un film souhaité sur le substrat commande de façon à réaliser des répétitions alternées multiples d'alimentation et d'évacuation des gaz de traitement tout en évitant le mélange des premier et second gaz de traitement dans l'espace de traitement et dans le revêtement de la surface de paroi interne de l'espace de traitement avec un film souhaité, et commande de façon à fournir simultanément les premier et second gaz de traitement à l'espace de traitement.
(JA)  基板を処理する空間を提供する処理空間と、前記処理空間を加熱する加熱部材と、前記処理空間に少なくとも第1と第2の処理ガスを供給するガス供給部材と、前記処理空間の雰囲気を排出する排出部材と、少なくとも前記ガス供給部材と排出部材を制御する制御部材であって、前記基板に所望の膜を生成する際は、前記処理空間内で前記第1と第2の処理ガスを混合させないように、それぞれの処理ガスの供給と排出を交互に複数回繰り返すように制御し、前記処理空間の内壁表面に所望の膜をコーティングする際は、前記第1と第2の処理ガスを共に前記処理空間へ供給するように制御する前記制御部材と、を備える基板処理装置が開示されている。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)