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Machine translation
1. (WO2007098459) SEMICONDUCTOR DEVICE WITH NITROGEN CONTAINING OXIDE LAYER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/098459    International Application No.:    PCT/US2007/062464
Publication Date: 30.08.2007 International Filing Date: 21.02.2007
IPC:
H01L 21/00 (2006.01)
Applicants: TEXAS INSTRUMENTS INCORPORATED [US/US]; P.o. Box 655474, Mail Station 3999, Dallas, TX 75265-5474 (US) (For All Designated States Except US).
NIIMI, Hiroaki [JP/US]; (US) (For US Only).
JACOBS, Jarvis, B. [US/US]; (US) (For US Only).
LAAKSONEN, Reima, Tapani [US/US]; (US) (For US Only)
Inventors: NIIMI, Hiroaki; (US).
JACOBS, Jarvis, B.; (US).
LAAKSONEN, Reima, Tapani; (US)
Agent: FRANZ, Warren, L.; Texas Instruments Incorporated, Deputy General Patent Counsel, P.O. Box 655474, MS 3999, Dallas, TX 75265-5474 (US)
Priority Data:
11/359,120 21.02.2006 US
Title (EN) SEMICONDUCTOR DEVICE WITH NITROGEN CONTAINING OXIDE LAYER
(FR) DISPOSITIF SEMI-CONDUCTEUR AVEC UNE COUCHE D'OXYDE CONTENANT DE L'AZOTE
Abstract: front page image
(EN)A gate structure (240) of a MOS transistor or the like in a semiconductor integrated circuit has a gate electrode (248) located over a nitrided gate dielectric (243) on a substrate (210); and a nitrided region (310) formed over a sidewall of the nitrided gate dielectric.
(FR)La structure de gâchette (240) d'un transistor MOS ou similaire selon l'invention dans un circuit intégré semi-conducteur comporte une électrode de gâchette (248) située sur un diélectrique de gâchette (243) nitruré sur un substrat (210), et une zone nitrurée (310) disposée sur une paroi latérale du diélectrique de gâchette nitruré.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)