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1. WO2007097457 - COMPOSITION FOR FORMING ANTIREFLECTION FILM AND ANTIREFLECTION FILM

Publication Number WO/2007/097457
Publication Date 30.08.2007
International Application No. PCT/JP2007/053627
International Filing Date 27.02.2007
IPC
G03F 7/11 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/091
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
091characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Applicants
  • 三菱瓦斯化学株式会社 MITSUBISHI GAS CHEMICAL COMPANY, INC. [JP]/[JP] (AllExceptUS)
  • 小黒 大 OGURO, Dai [JP]/[JP] (UsOnly)
  • 越後 雅敏 ECHIGO, Masatoshi [JP]/[JP] (UsOnly)
Inventors
  • 小黒 大 OGURO, Dai
  • 越後 雅敏 ECHIGO, Masatoshi
Agents
  • 大谷 保 OHTANI, Tamotsu
Priority Data
2006-05025127.02.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR FORMING ANTIREFLECTION FILM AND ANTIREFLECTION FILM
(FR) COMPOSITION POUR FORMER UN FILM ANTIREFLEXION ET FILM ANTIREFLEXION
(JA) 反射防止膜形成用組成物および反射防止膜
Abstract
(EN)
Disclosed is a composition for forming antireflection films, which contains a polyphenol compound having a specific structure and a solvent. The polyphenol compound is obtained by a condensation reaction of at least one aromatic aldehyde having 6-20 carbon atoms and a compound containing 1-3 phenolic hydroxyl groups and having 6-15 carbon atoms. The polyphenol compound has a molecular weight of 400-2000, a molecular weight distribution Mw/Mn of 1-1.05, and a glass transition temperature of not less than 110˚C. An antireflection film formed on a substrate by using such a composition absorbs light reflected by the substrate and improves formability of a resist pattern which is formed on the antireflection film. Since the antireflection film has low sublimation property and high dry etching resistance, it enables to reduce line-edge roughness of the resist pattern. In addition, since such an antireflection film is soluble in an alkali developing solution, removal of the antireflection film does not require a special dry etching.
(FR)
La présente invention concerne une composition pour former des films antiréflexion, qui contient un composé polyphénol ayant une structure spécifique et un solvant. Le composé polyphénol est obtenu par une réaction de condensation d'au moins un aldéhyde aromatique contenant de 6 à 20 atomes de carbone et un composé contenant de 1 à 3 groupes hydroxyle phénoliques et contenant de 6 à 15 atomes de carbone. Le composé polyphénol a une masse moléculaire de 400 à 2000, une distribution de masse moléculaire Mm/Mn de 1 à 1,05, et une température de transition vitreuse non inférieure à 110 °C. Un film antiréflexion formé sur un substrat en utilisant une telle composition absorbe la lumière réfléchie par le substrat et améliore l'aptitude à la formation d'un motif de résist qui est formé sur le film antiréflexion. Etant donné que le film antiréflexion a une propriété de faible sublimation et une résistance à la gravure à l'état sec, il permet de réduire la rugosité de bord de ligne du motif de résist. En outre, étant donné qu'un tel film antiréflexion est soluble dans une solution révélatrice à base d'alcali, l'élimination du film antiréflexion ne nécessite pas une gravure spéciale à sec.
(JA)
 特定の構造を有するポリフェノール化合物と溶剤を含む反射防止膜形成用組成物。該ポリフェノール化合物は少なくとも1種の炭素数6~20の芳香族アルデヒドと1~3個のフェノール性水酸基を含有する炭素数6~15の化合物との縮合反応により得られ、分子量が400~2000、分子量分布Mw/Mnが1~1.05、および、ガラス転移温度が110°C以上である。該組成物を用いて基板上に形成した反射防止膜は、基板からの反射光を吸収し、該反射防止膜上に形成されるレジストパターン形成性を向上する。該反射防止膜は、低昇華性、高ドライエッチング耐性なので、レジストパターンラインエッジラフネスを低減する。また、アルカリ現像液に可溶なので、反射防止膜の除去に特別なドライエッチング処理を必要としない。
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