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1. (WO2007097270) FILM FORMING APPARATUS AND SUBSTRATE PROCESSING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/097270    International Application No.:    PCT/JP2007/052929
Publication Date: 30.08.2007 International Filing Date: 19.02.2007
IPC:
H01L 21/205 (2006.01), C23C 16/44 (2006.01), B08B 7/00 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-Chome, Minato-Ku, Tokyo 1078481 (JP) (For All Designated States Except US).
ROHM CO., LTD. [JP/JP]; 21, Saiin Mizosaki-Cho, Ukyo-Ku, Kyoto-Shi, Kyoto 6158585 (JP) (For All Designated States Except US).
Kyoto University [JP/JP]; 36-1, Yoshida-Honmachi, Sakyo-Ku, Kyoto-Shi, Kyoto 6068501 (JP) (For All Designated States Except US).
KOBAYASHI, Hirokatsu [JP/JP]; (JP) (For US Only).
MORISAKI, Eisuke [JP/JP]; (JP) (For US Only).
KAMISAWA, Akira [JP/JP]; (JP) (For US Only).
NAKAMURA, Takashi [JP/JP]; (JP) (For US Only).
KAWAMOTO, Noriaki [JP/JP]; (JP) (For US Only).
AKETA, Masatoshi [JP/JP]; (JP) (For US Only).
KIMOTO, Tsunenobu [JP/JP]; (JP) (For US Only)
Inventors: KOBAYASHI, Hirokatsu; (JP).
MORISAKI, Eisuke; (JP).
KAMISAWA, Akira; (JP).
NAKAMURA, Takashi; (JP).
KAWAMOTO, Noriaki; (JP).
AKETA, Masatoshi; (JP).
KIMOTO, Tsunenobu; (JP)
Agent: ITOH, Tadahiko; 32nd Floor, Yebisu Garden Place Tower, 20-3, Ebisu 4-Chome, Shibuya-Ku, Tokyo 1506032 (JP)
Priority Data:
2006-044430 21.02.2006 JP
Title (EN) FILM FORMING APPARATUS AND SUBSTRATE PROCESSING METHOD
(FR) APPAREIL DE FORMATION DE FILM ET PROCEDE DE TRAITEMENT DE SUBSTRAT
(JA) 成膜装置および基板処理方法
Abstract: front page image
(EN)In a film forming apparatus, a processing container having a holding table for holding a substrate to be processed in a depressurized space is supplied with a material gas to be a material for film formation, and a film is formed on the substrate by epitaxial growing by inductively heating the substrate by a coil. The apparatus is characterized in that the inside of the processing container is cleaned by supplying the processing container with a cleaning gas and by plasma-exciting the cleaning gas.
(FR)Selon la présente invention, dans un appareil de formation de film, un récipient de traitement possédant une table de support destinée à supporter un substrat à traiter dans un espace de décompression est alimenté en matière gazeuse utilisée pour former un film, et un film est formé sur le substrat par croissance épitaxiale en chauffant par induction le substrat à l'aide d'une bobine. L'appareil se caractérise en ce que l'intérieur du récipient de traitement se nettoie par introduction d'un gaz de nettoyage excité au plasma.
(JA) 被処理基板を保持する保持台を内部の減圧空間に備えた処理容器に、成膜の原料となる原料ガスを供給するとともに、前記被処理基板をコイルにより誘導加熱することで、該被処理基板上にエピタキシャル成長による成膜を行う成膜装置であって、前記処理容器にクリーニングガスを供給するとともに、該クリーニングガスをプラズマ励起することで、前記処理容器内のクリーニングを行うよう構成されていることを特徴とする成膜装置。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)