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1. WO2007097264 - SEMICONDUCTOR ELEMENT

Publication Number WO/2007/097264
Publication Date 30.08.2007
International Application No. PCT/JP2007/052872
International Filing Date 16.02.2007
IPC
H01L 21/338 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
338with a Schottky gate
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/812 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
80with field effect produced by a PN or other rectifying junction gate
812with a Schottky gate
H01L 29/861 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
CPC
H01L 29/2003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
2003Nitride compounds
H01L 29/7787
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
7787with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Applicants
  • 古河電気工業株式会社 THE FURUKAWA ELECTRIC CO., LTD. [JP]/[JP] (AllExceptUS)
  • 佐藤 義浩 SATO, Yoshihiro [JP]/[JP] (UsOnly)
  • 加藤 禎宏 KATO, Sadahiro [JP]/[JP] (UsOnly)
  • 吉田 清輝 YOSHIDA, Seikoh [JP]/[JP] (UsOnly)
Inventors
  • 佐藤 義浩 SATO, Yoshihiro
  • 加藤 禎宏 KATO, Sadahiro
  • 吉田 清輝 YOSHIDA, Seikoh
Agents
  • 酒井 宏明 SAKAI, Hiroaki
Priority Data
2006-04303620.02.2006JP
2007-03034109.02.2007JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR ELEMENT
(FR) ELEMENT SEMICONDUCTEUR
(JA) 半導体素子
Abstract
(EN)
The resistance of a buffer layer is increased without further causing current collapse, and a leak current generated in the buffer layer is reduced. In a HEMT (1), a substrate (2) is provided with a low temperature buffer layer (3) composed of GaN compound semiconductor, a buffer layer (4), an electron transport layer (5) and an electron supply layer (6) in this order. Carbon is added to the buffer layer (4), and the carbon is added at a concentration where the current collapse rapidly changes or lower but not lower than a concentration where the withstand voltage of the HEMT (1) rapidly changes. The electron transport layer (5) has a thickness where the current collapse rapidly changes or more but not more than a thickness where the withstand voltage of the HEMT (1) rapidly changes.
(FR)
La présente invention concerne l'augmentation de résistance d'une couche tampon augmentée sans entraîner de chute de courant, et le courant de fuite généré dans la couche tampon est réduit. Dans un HEMT (1), un substrat (2) est fourni avec une couche tampon à basse température (3), composé de semiconducteur à composé GaN, une couche tampon (4), une couche de transport d'électron (5) et une couche d'alimentation d'électron (6) dans cet ordre. Du carbone est ajouté à la couche tampon (4) et le carbone est ajouté à un niveau de concentration où la chute de courant change rapidement ou s'abaisse mais pas plus bas qu'une concentration où la tension de tenue de l'HEMT (1) change rapidement. La couche de transport d'électrons (5) a une épaisseur où la chute de courant change rapidement ou plus mais pas plus qu'une épaisseur où la tension de tenue de l'HEMT (1) change rapidement.
(JA)
 電流コラプスを悪化させることなくバッファ層を高抵抗化し、バッファ層中に発生するリーク電流を低減させること。HEMT1は、基板2上に、それぞれGaN系化合物半導体からなる低温バッファ層3、バッファ層4、電子走行層5および電子供給層6を、この順に積層して備える。バッファ層4は、炭素が添加され、この添加される炭素濃度は、この炭素濃度に対して電流コラプスが急激に変化する濃度以下であり、かつこの炭素濃度に対してHEMT1の耐圧が急激に変化する濃度以上とされる。また、電子走行層5の層厚は、この層厚に対して電流コラプスが急激に変化する厚さ以上であり、かつこの層厚に対してHEMT1の耐圧が急激に変化する厚さ以下とされる。
Also published as
Latest bibliographic data on file with the International Bureau