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1. WO2007097151 - BOUNDARY ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2007/097151
Publication Date 30.08.2007
International Application No. PCT/JP2007/051004
International Filing Date 23.01.2007
IPC
H03H 9/145 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
H01L 41/09 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive elements
09with electrical input and mechanical output
H01L 41/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
H03H 3/08 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/25 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
CPC
H03H 9/0222
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
0222of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
H03H 9/14541
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
14538Formation
14541Multilayer finger or busbar electrode
Y10T 29/42
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
29Metal working
42Piezoelectric device making
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP] (AllExceptUS)
  • 山本 大輔 YAMAMOTO, Daisuke [JP]/[JP] (UsOnly)
  • 神藤 始 KANDO, Hajime [JP]/[JP] (UsOnly)
  • 寺本 哲浩 TERAMOTO, Akihiro [JP]/[JP] (UsOnly)
  • 冬爪 敏之 FUYUTSUME, Toshiyuki [JP]/[JP] (UsOnly)
  • 佐伯 昌彦 SAEKI, Masahiko [JP]/[JP] (UsOnly)
Inventors
  • 山本 大輔 YAMAMOTO, Daisuke
  • 神藤 始 KANDO, Hajime
  • 寺本 哲浩 TERAMOTO, Akihiro
  • 冬爪 敏之 FUYUTSUME, Toshiyuki
  • 佐伯 昌彦 SAEKI, Masahiko
Agents
  • 宮▲崎▼ 主税 MIYAZAKI, Chikara
Priority Data
2006-04707023.02.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) BOUNDARY ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF A ONDE ACOUSTIQUE LIMITE ET SON PROCEDE DE FABRICATION
(JA) 弾性境界波装置及びその製造方法
Abstract
(EN)
Disclosed is a boundary acoustic wave device wherein loss is reduced. Specifically disclosed is a boundary acoustic wave device (1) comprising a first medium (2), a second medium (3) and an IDT electrode (4) arranged on the interface between the first medium (2) and the second medium (3). The IDT electrode (4) has an Au layer (11) as a main electrode layer, and an Ni layer (12) is arranged in contact with at least one side of the Au layer. A part of Ni constituting the Ni layer (12) is diffused into the Au layer (11) from the Ni-layer-side surface of the Au layer (11).
(FR)
La présente invention concerne un dispositif à onde acoustique limite dans lequel la perte est réduite. La présente invention concerne spécifiquement un dispositif à onde acoustique limite (1) comprenant un premier milieu (2), un second milieu (3) et une électrode IDT (4) disposée sur l'interface entre le premier milieu (2) et le second milieu (3). L'électrode IDT (4) possède une couche d'Au (11) en tant que couche d'électrode principale, et une couche de Ni (12) est disposée en contact avec au moins un côté de la couche d'Au. Une partie du Ni constituant la couche de Ni (12) est diffusée dans la couche d'Au (11) à partir de la surface du côté de la couche de Ni de la couche d'Au (11).
(JA)
 低損失化を果たすことが可能な弾性境界波装置を提供する。 第1の媒質2と、第2の媒質3と、第1,第2の媒質2,3間の界面に配置されたIDT電極4とを有し、IDT電極4が主電極層としてAu層11を有し、Au層の少なくとも一方表面に接するようにNi層12が積層されており、Ni層12を構成しているNiの一部がAu層11のNi層側表面からAu層11の内部に向かって拡散されている、弾性境界波装置1。
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