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1. WO2007097024 - VAPORIZER, SEMICONDUCTOR PRODUCTION APPARATUS AND PROCESS OF SEMICONDUCTOR PRODUCTION

Publication Number WO/2007/097024
Publication Date 30.08.2007
International Application No. PCT/JP2006/303616
International Filing Date 27.02.2006
IPC
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/448 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
CPC
C23C 16/4481
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
4481by evaporation using carrier gas in contact with the source material
C23C 16/45525
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
C23C 16/45544
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45544characterized by the apparatus
C23C 16/45551
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45544characterized by the apparatus
45548having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
45551for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
C23C 16/545
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
54Apparatus specially adapted for continuous coating
545for coating elongated substrates
Applicants
  • 株式会社ユーテック YOUTEC CO., LTD. [JP]/[JP] (AllExceptUS)
  • 矢元 久良 YAMOTO, Hisayoshi [JP]/[JP]
  • 腰前 伸一 KOSHIMAE, Shinichi [JP]/[JP] (UsOnly)
  • 本多 祐二 HONDA, Yuji [JP]/[JP] (UsOnly)
Inventors
  • 矢元 久良 YAMOTO, Hisayoshi
  • 腰前 伸一 KOSHIMAE, Shinichi
  • 本多 祐二 HONDA, Yuji
Agents
  • 牛木 護 USHIKI, Mamoru
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) VAPORIZER, SEMICONDUCTOR PRODUCTION APPARATUS AND PROCESS OF SEMICONDUCTOR PRODUCTION
(FR) EVAPORATEUR, APPAREIL DE PRODUCTION DE SEMI-CONDUCTEURS ET PROCEDE DE PRODUCTION DE SEMI-CONDUCTEURS
(JA) 気化器、半導体製造装置及び半導体製造方法
Abstract
(EN)
A vaporizer, semiconductor production apparatus and process of semiconductor production that realize marked increase of the use efficiency of raw gas, uniform generation of a film thickness corresponding to the raw gas and decrease of maintenance frequency and enhancement of productivity over the prior art. At the operation of ALD, a carrier gas is continuously fed into reaction chamber (402), and a given amount of raw material solution corresponding to the thickness of one atomic layer or one molecular layer determined by means of micro-quantitative determination pump (54) is intermittently fed into vaporization means (20). The thus obtained raw gas from the given amount of raw material solution together with the carrier gas is fed into the reaction chamber (402). Thus, in gas shower type thermal CVD apparatus (1), while avoiding wasting of the raw gas through switching operation of reaction chamber side valve (404) and vent side valve (407), a thin film of desired thickness consisting of one atomic layer or one molecular layer can be sequentially formed on substrate (420). Therefore, inasmuch as wasting of raw gas is avoided during the process of sequentially forming of a thin film of one atomic layer or one molecular layer, the use efficiency of raw gas can be markedly enhanced.
(FR)
La présente invention concerne un évaporateur, un appareil de production de semi-conducteurs et un procédé de production de semi-conducteurs qui réalisent un accroissement marqué de l'efficacité d'utilisation d'un gaz brut, la génération uniforme d'une épaisseur de film correspondant au gaz brut et l'abaissement de la fréquence de maintenance et l'amélioration de la productivité par rapport à l'état d'avancement de la science. Lors d'une opération d'ALD, un gaz vecteur est continuellement inséré dans une chambre de réaction (402) et un volume déterminé d'une solution de matière première correspondant à l'épaisseur d'une couche atomique ou d'une couche moléculaire déterminée au moyen d'une pompe de détermination micro-quantitative (54) est, de manière intermittente, inséré dans l'élément évaporateur (20). Le gaz brut ainsi obtenu à partir du volume donné de la solution de matière première avec le gaz vecteur est envoyé dans la chambre de réaction (402). Ainsi, dans l'appareil CVD thermique de type douche de gaz (1), tout en évitant la fuite du gaz brut au travers une opération de commutation d'une vanne latérale de la chambre de réaction (404) et d'une vanne latérale d'aération (407), un film mince de l'épaisseur voulue, composé d'une couche atomique ou d'une couche moléculaire, peut être formé séquentiellement sur le substrat (420). Par conséquent, pour autant que la perte de gaz brut soit évitée durant le procédé de formation séquentielle d'un film mince d'une couche atomique ou d'une couche moléculaire, l'efficacité d'utilisation du gaz brut peut être remarquablement améliorée.
(JA)
原料ガスの使用効率を格段と向上し得るとともに、原料ガスに応じた膜厚を均一に形成でき、かつ従来に比してメンテナンス頻度を少なくして生産性を向上させ得る気化器、半導体製造装置及び半導体製造方法を提供する。 ALD動作時、反応室402にキャリアガスを供給し続け、微量定量ポンプ54で定量した1原子層又は1分子層の膜厚に応じた所定量の原料溶液を間欠的に気化機構20に供給し、これにより得られた所定量の原料溶液からなる原料ガスをキャリアガスと共に反応室402に供給するようにした。従って、ガスシャワー式熱CVD装置1では、反応室側バルブ404及びベント側バルブ407の開閉動作によって原料ガスが廃棄されるのを回避しながら、1原子層又は1分子層でなる所望の膜厚の薄膜を基板420上に順次形成させてゆくことができ、かくして1原子層又は1分子層の薄膜を順次形成してゆく過程で原料ガスを廃棄しない分だけ原料ガスの使用効率を格段と向上させ得る。
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