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1. (WO2007095723) SEMICONDUCTOR NANOCRYSTALS FOR TIME DOMAIN OPTICAL IMAGING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/095723    International Application No.:    PCT/CA2007/000233
Publication Date: 30.08.2007 International Filing Date: 16.02.2007
IPC:
C09K 11/00 (2006.01), A61B 6/00 (2006.01), C09K 11/54 (2006.01), C09K 11/88 (2006.01), G01N 21/64 (2006.01)
Applicants: NATIONAL RESEARCH COUNCIL OF CANADA [CA/CA]; 1200 Montreal Road, M-58, EG-06B, Ottawa, Ontario K1A 0R6 (CA) (For All Designated States Except US).
YU, Kui [CA/CA]; (CA) (For US Only).
ABULROB, Abedelnasser [CA/CA]; (CA) (For US Only)
Inventors: YU, Kui; (CA).
ABULROB, Abedelnasser; (CA)
Agent: MITCHELL, Richard, J.; c/o Marks & Clerk, P.O. Box 957, Station B., Ottawa, Ontario K1P 5S7 (CA)
Priority Data:
60/774,615 21.02.2006 US
Title (EN) SEMICONDUCTOR NANOCRYSTALS FOR TIME DOMAIN OPTICAL IMAGING
(FR) NANOCRISTAUX SEMI-CONDUCTEURS POUR L'IMAGERIE OPTIQUE DU DOMAINE TEMPOREL
Abstract: front page image
(EN)A method of performing high repetition rate laser time domain imaging employs as fluoroprobes semiconductor nanocrystals having a fluorescence lifetime less than the laser pulse separation, typically less than 5ns. The nanocrystals of the invention have a core/shell structure and may be surface treated to increase radiative decay. CdSe/Zns nanocrystals are particularly suitable.
(FR)La présente invention concerne un procédé pour réaliser une imagerie du domaine temporel au laser à une fréquence de récurrence élevée, ce procédé mettant en oeuvre des nanocristaux semi-conducteurs de sondes fluorescentes ayant une durée de vie de fluorescence inférieure à la séparation des impulsions laser, généralement moins de 5 ns. Les nanocristaux de l'invention ont une structure à noyau/coquille et peuvent être traités en surface afin d'augmenter la désintégration radioactive. Des nanocristaux de CdSe/Zns sont particulièrement adaptés.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)