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1. WO2007095487 - EXHAUST DEPOSIT BUILDUP MONITORING IN SEMICONDUCTOR PROCESSING

Publication Number WO/2007/095487
Publication Date 23.08.2007
International Application No. PCT/US2007/061971
International Filing Date 12.02.2007
IPC
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
C23C 16/4412
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
C23C 16/52
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
52Controlling or regulating the coating process
H01L 21/67248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67248Temperature monitoring
H01L 21/67253
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67253Process monitoring, e.g. flow or thickness monitoring
H01L 21/67288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67288Monitoring of warpage, curvature, damage, defects or the like
Applicants
  • TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • TOKYO ELECTRON AMERICA, INC. [US]/[US] (JP)
  • PETTIT, Jonathan [US]/[US] (UsOnly)
  • JOE, Raymond [US]/[US] (UsOnly)
Inventors
  • PETTIT, Jonathan
  • JOE, Raymond
Agents
  • DAVIDSON, Kristi, L.
Priority Data
11/352,91913.02.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) EXHAUST DEPOSIT BUILDUP MONITORING IN SEMICONDUCTOR PROCESSING
(FR) SURVEILLANCE DE L'ACCUMULATION DE DÉPÔTS D'ÉCHAPPEMENT DANS LE TRAITEMENT DE SEMI-CONDUCTEURS
Abstract
(EN)
A system (40) is provided for determining when the buildup of deposits (30) in an exhaust line (20) of a semiconductor wafer processing machine (10) requires cleaning. Deposits in vacuum exhaust lines (20) build up to where they eventually fail structurally, releasing particles that can contaminate equipment and processes. The time at which cleaning is required is often unpredictable, while frequent or early cleaning to avoid waiting too long unnecessarily reduces productivity. The invention provides for the monitoring of thermal properties on the inside of an exhaust line wall. Deposits cause changes in the monitored thermal properties. A heater (42) and thermocouple (43) can be used, for example, and the temperature at the thermocouple that is due to heat flow from the heater is measured. Buildups (30) in the exhaust line affect heat flow to the sensor and are measurable as a decline in sensed temperature. Structural failure of the coating in the exhaust line leads to the eventual leveling off and fluctuation of the temperature measurement. Comparison or correlation of the sensed thermal property or a profile thereof with data stored under known exhaust line conditions is used to determine the condition of the exhaust line and signal when cleaning is most appropriate.
(FR)
Système (40) conçu pour déterminer le moment auquel l'accumulation de dépôts (30) dans un circuit d'échappement (20) d'une machine de traitement de plaquettes à semi-conducteur (10) exige un nettoyage. Les dépôts dans les circuits d'échappement (20) vont s'accumuler jusqu'au moment où ils s'effondrent, libérant alors des particules risquant de contaminer les équipements et les processus. Le moment où le nettoyage est requis est souvent imprévisible, et un nettoyage fréquent ou prématuré pour éviter une attente trop longue va réduire inutilement la productivité. L'invention permet la surveillance de propriétés thermiques à l'intérieur d'une paroi de circuit d'échappement. Les dépôts provoquent des changements au niveau des propriétés thermiques surveillées. Un dispositif de chauffage (42) et un thermocouple (43), par exemple, peuvent être utilisés et la température au niveau du thermocouple provoquée par l'écoulement thermique provenant du dispositif de chauffage est mesurée. Les dépôts (30) dans le circuit d'échappement influent sur l'écoulement thermique vers le capteur et sont mesurables en termes de baisse de la température détectée. L'effondrement du revêtement dans le circuit d'échappement conduit finalement à un nivellement et une fluctuation de la mesure de température. La comparaison ou la corrélation de la propriété thermique détectée ou d'un profil de celle-ci avec des données stockées dans des conditions connues de circuit d'échappement sert à déterminer la condition du circuit d'échappement et à signaler le moment auquel un nettoyage s'impose.
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