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1. (WO2007095137) METHOD FOR CONDUCTIVITY CONTROL OF (AL,IN,GA,B)N
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/095137    International Application No.:    PCT/US2007/003607
Publication Date: 23.08.2007 International Filing Date: 09.02.2007
IPC:
H01L 21/00 (2006.01), H01L 21/36 (2006.01), H01L 29/00 (2006.01)
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, 12th Floor, Oakland, CA 94607 (US) (For All Designated States Except US).
KAEDING, John, F. [US/US]; (US) (For US Only).
SATO, Hitoshi [JP/JP]; (JP) (For US Only).
IZA, Michael [US/US]; (US) (For US Only).
ASAMIZU, Hirokuni [JP/US]; (US) (For US Only).
ZHONG, Hong [CN/US]; (US) (For US Only).
DENBAARS, Steven, P. [US/US]; (US) (For US Only).
NAKAMURA, Shuji [US/US]; (US) (For US Only)
Inventors: KAEDING, John, F.; (US).
SATO, Hitoshi; (JP).
IZA, Michael; (US).
ASAMIZU, Hirokuni; (US).
ZHONG, Hong; (US).
DENBAARS, Steven, P.; (US).
NAKAMURA, Shuji; (US)
Agent: GATES, George, H.; Gates & Cooper LLP, 6701 Center Drive West, Suite 1050, Los Angeles, CA 90045 (US)
Priority Data:
60/772,184 10.02.2006 US
Title (EN) METHOD FOR CONDUCTIVITY CONTROL OF (AL,IN,GA,B)N
(FR) PROCÉDÉ DE CONTRÔLE DE LA CONDUCTIVITÉ DE (AL,IN,GA,B)N
Abstract: front page image
(EN)A method of controlled p-type conductivity in (Al, In, Ga, B)N semiconductor crystals. Examples include { 1011 } GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
(FR)La présente invention concerne un procédé de conductivité de type p contrôlée dans des cristaux semi-conducteurs (Al, In, Ga, B)N. Des exemples comprennent des films GaN { 1011 } déposés sur un substrat spinelle {100} MgAl2O4 à angle de coupe dans la direction <011>. Des atomes Mg peuvent être délibérément incorporés dans le film mince de nitrure semi-polaire en croissance pour introduire des états électroniques disponibles dans la structure de bande du cristal semi-conducteur, entraînant une conductivité de type p. D'autres atomes d'impuretés, tels que Zn ou C, qui entraînent un introduction identique d'états électroniques, peuvent également être utilisés.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)