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1. WO2007094579 - A METHOD OF MANUFACTURING IMAGE SENSOR

Publication Number WO/2007/094579
Publication Date 23.08.2007
International Application No. PCT/KR2007/000643
International Filing Date 07.02.2007
Chapter 2 Demand Filed 06.09.2007
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/14685
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14685Process for coatings or optical elements
Applicants
  • SILICONFILE TECHNOLOGIES INC. [KR]/[KR] (AllExceptUS)
  • LEE, Do Young [KR]/[KR] (UsOnly)
Inventors
  • LEE, Do Young
Agents
  • LEE, Cheol Hee
Priority Data
10-2006-001345713.02.2006KR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A METHOD OF MANUFACTURING IMAGE SENSOR
(FR) PROCÉDÉ SERVANT À FABRIQUER UN CAPTEUR D'IMAGES
Abstract
(EN)
Provided is a method of manufacturing image sensor capable of maximizing light condensing efficiency so that the light input through a micro-lens is condensed onto a light receiving element. According to the present invention, inner micro-lenses or a U-shaped nitride film are used to maximize light condensing efficiency of the light input through the micro-lens. Therefore, light condensing efficiency of the light condensed onto the light receiving element in the image sensor can be improved.
(FR)
L'invention concerne un procédé de fabrication d'un capteur d'images capable d'optimiser au maximum l'efficacité de la condensation de la lumière, de façon à condenser l'entrée de lumière à travers une micro-lentille sur un élément récepteur de lumière. Selon l'invention, on utilise des micro-lentilles intérieures ou une couche de nitrure en forme de U afin d'optimiser au maximum l'efficacité de l'entrée de la lumière à travers la micro-lentille. Ceci permet d'améliorer l'efficacité de condensation de la lumière sur l'élément récepteur de lumière du capteur d'images.
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