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1. WO2007094389 - MASK BLANK AND PHOTOMASK

Publication Number WO/2007/094389
Publication Date 23.08.2007
International Application No. PCT/JP2007/052683
International Filing Date 15.02.2007
IPC
G03F 1/50 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
50Mask blanks not covered by groups G03F1/20-G03F1/2686; Preparation thereof
G03F 1/54 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54Absorbers, e.g. opaque materials
CPC
G03F 1/32
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
26Phase shift masks [PSM]; PSM blanks; Preparation thereof
32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
G03F 1/36
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 1/50
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
G03F 1/54
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54Absorbers, e.g. of opaque materials
Applicants
  • HOYA株式会社 HOYA CORPORATION [JP]/[JP] (AllExceptUS)
  • 三井 勝 MITSUI, Masaru [JP]/[JP] (UsOnly)
  • 佐野 道明 SANO, Michiaki [JP]/[JP] (UsOnly)
  • 牛田 正男 USHIDA, Masao [JP]/[JP] (UsOnly)
Inventors
  • 三井 勝 MITSUI, Masaru
  • 佐野 道明 SANO, Michiaki
  • 牛田 正男 USHIDA, Masao
Agents
  • 藤村 康夫 FUJIMURA, Yasuo
Priority Data
2006-03746115.02.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MASK BLANK AND PHOTOMASK
(FR) EBAUCHE DE MASQUE ET MASQUE PHOTOGRAPHIQUE
(JA) マスクブランク及びフォトマスク
Abstract
(EN)
[PROBLEMS] To provide a mask blank and a photomask suitable for processes (resist coating method, etching method, rinsing method, and so forth) in a large mask for an FPD device. [MEANS FOR SOLVING THE PROBLEMS] This mask blank for manufacturing an FPD device has at least either of a light-shielding film and a semi-light transmission film with a function of adjusting the amount of transmission on a light transmission substrate. The mask blank is characterized in that the light-shielding film and the semi-light transmission film have a root means square roughness Rq of 2.0 nm or less of the surface of the film.
(FR)
Le problème à résoudre dans le cadre de la présente invention consiste à mettre à disposition une ébauche de masque et un masque photographique adaptés pour des processus (procédé de revêtement de réserve, procédé de gravure, procédé de rinçage et ainsi de suite) dans un grand masque pour un dispositif FPD. La solution proposée consiste en ce que cette ébauche de masque pour fabriquer un dispositif FPD comporte au moins l'un ou l'autre d'un film de protection contre la lumière et d'un film de transmission de semi-lumière avec une fonction de réglage du degré de transmission sur un substrat de transmission de lumière. L'ébauche de masque se caractérise en ce que le film de protection contre la lumière et le film de transmission de semi-lumière ont une rugosité d'une moyenne quadratique Rq de 2,0 nm ou moins de la surface du film.
(JA)
【課題】FPD用大型マスクにおけるプロセス(レジスト塗布方法やエッチング方法、洗浄方法等)に適したマスクブランク及びフォトマスクを提供する。 【解決手段】透光性基板上に、遮光性膜、及び透過量を調整する機能を有する半透光性膜、のうちのを少なくとも一方を有するFPDデバイスを製造するためのマスクブランクであって、  前記遮光性膜、及び前記半透光性膜は、膜表面の二乗平均平方根粗さRqが2.0nm以下であることを特徴とする。
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