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1. WO2007092893 - MATERIALS AND METHODS FOR THE MANUFACTURE OF LARGE CRYSTAL DIAMONDS

Publication Number WO/2007/092893
Publication Date 16.08.2007
International Application No. PCT/US2007/061785
International Filing Date 07.02.2007
IPC
C30B 25/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
C01B 31/06 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31Carbon; Compounds thereof
02Preparation of carbon; Purification
06Diamond
CPC
C30B 25/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
C30B 25/18
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
C30B 29/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
04Diamond
Y10T 428/12493
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
12All metal or with adjacent metals
12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
Applicants
  • TARGET TECHNOLOGY COMPANY, LLC [US]/[US] (AllExceptUS)
  • NEE, Han, H. [US]/[US] (UsOnly)
Inventors
  • NEE, Han, H.
Agents
  • GANDY, Kenneth, A.
Priority Data
60/771,14007.02.2006US
60/784,13820.03.2006US
60/864,27803.11.2006US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MATERIALS AND METHODS FOR THE MANUFACTURE OF LARGE CRYSTAL DIAMONDS
(FR) MATERIAUX ET PROCEDES DE FABRICATION DE DIAMANTS MONOCRISTALLINS DE GRANDE DIMENSION
Abstract
(EN)
Materials and methods are provided for forming single crystal diamond growth using microwave plasma chemical vapor deposition (CVD) process in partial vacuum with a gaseous mixture containing a methane/ hydrogen mixture with optional nitrogen, oxygen and xenon addition. The single crystal substrate can be formed by a modified directional solidification process starting with at least one of the following: pure nickel or a nickel alloy which includes cobalt, iron, or a combination thereof using a vacuum induction melting process. A surface of the single crystal substrate is coated using an electron beam evaporation device with pure iridium or an alloy of iridium and a component selected from the group consisting of iron, cobalt, nickel, molybdenum, rhenium and a combination thereof. The alloy coated single crystal substrate is positioned in a microwave plasma CVD reactor and upon being subjected to a biased enhanced nucleation treatment in the presence of a gaseous mixture of methane, hydrogen, and other optional gases with a biased voltage of negative 100 to 400 volts supports the growth of a large single crystal diamond on it's coated surface.
(FR)
L'invention porte sur des matériaux et sur des procédés permettant de réaliser la croissance d'un diamant monocristallin par dépôt chimique en phase vapeur assisté par plasma micro-onde (MPACVD) sous vide partiel avec un mélange gazeux contenant un mélange de méthane/hydrogène avec éventuellement des éléments d'addition tels que l'azote, l'oxygène et le xénon. Le substrat monocristallin peut être réalisé par un procédé de solidification directionnel modifié commençant par un moins un des éléments suivants: nickel pur ou un alliage de nickel contenant du cobalt, de fer ou une combinaison de ces derniers au moyen d'un procédé de fusion par induction sous vide. Une surface du substrat monocristallin est recouverte à l'aide d'un dispositif d'évaporation par faisceau d'électrons avec de l'iridium pur ou un alliage d'iridium et un composant sélectionné dans le groupe constitué de fer, de cobalt, de nickel, de molybdène, de rhénium et une combinaison desdits composants. Le substrat monocristallin recouvert d'un alliage est positionné dans un réacteur de dépôt chimique en phase vapeur assisté par plasma micro-ondes (MPCVD) et, une fois soumis à un traitement de nucléation amélioré polarisé en présence d'un mélange gazeux de méthane, d'hydrogène et d'autres gaz optionnels avec une tension polarisée comprise entre 100 et 400 volts négatifs, supporte la croissance d'un diamant monocristallin de grande dimension sur sa surface recouverte.
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