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Machine translation
1. (WO2007092867) SEMICONDUCTOR DEVICE FABRICATED USING A RAISED LAYER TO SILICIDE THE GATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/092867    International Application No.:    PCT/US2007/061728
Publication Date: 16.08.2007 International Filing Date: 07.02.2007
IPC:
H01L 29/76 (2006.01)
Applicants: TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474, Mail Station 3999, Dallas, TX 75265-5474 (US) (For All Designated States Except US).
KOHLI, Puneet [IN/US]; (US) (For US Only).
RAMIN, Manfred, B. [DE/US]; (US) (For US Only)
Inventors: KOHLI, Puneet; (US).
RAMIN, Manfred, B.; (US)
Agent: FRANZ, Warren, L.; Texas Instruments Incorporated, Deputy General Patent Counsel, P.O. Box 655474, MS 3999, Dallas, TX 75265-5474 (US)
Priority Data:
11/348,835 07.02.2006 US
Title (EN) SEMICONDUCTOR DEVICE FABRICATED USING A RAISED LAYER TO SILICIDE THE GATE
(FR) DISPOSITIF À SEMI-CONDUCTEUR À COUCHE SURÉLEVÉE POUR FORMATION D'UN SILICIURE SUR LA GRILLE
Abstract: front page image
(EN)In one aspect, the invention provides a method of fabricating a semiconductor device 200 that comprises forming a raised layer (510) adjacent a gate (340) and over a source/drain (415), depositing a silicidation layer (915) over the gate and the raised layer, and moving at least a portion of the silicidation layer into the source/drain through the raised layer.
(FR)Selon un aspect, cette invention concerne un procédé de fabrication d'un dispositif à semi-conducteur (200). Ce procédé consiste à former une couche surélevée (510) contre une grille (340) et sur une zone de source/drain (415), à déposer une couche de silicidation (915) sur la grille et la couche surélevée, et à amener au moins une partie de la couche de silicidation dans la zone de source/drain via la couche surélevée.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)