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Machine translation
1. (WO2007092800) LOW PH POST-CMP RESIDUE REMOVAL COMPOSITION AND METHOD OF USE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/092800    International Application No.:    PCT/US2007/061588
Publication Date: 16.08.2007 International Filing Date: 05.02.2007
IPC:
H01L 21/31 (2006.01)
Applicants: ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive, Danbury, Connecticut 06810 (US) (For All Designated States Except US).
BARNES, Jeffrey A. [US/US]; (US) (For US Only)
Inventors: BARNES, Jeffrey A.; (US)
Agent: FUIERER, Tristan A.; Moore & Van Allen PLLC, Post Office Box 13706, Research Triangle Park, North Carolina 27709 (US)
Priority Data:
60/764,972 03.02.2006 US
Title (EN) LOW PH POST-CMP RESIDUE REMOVAL COMPOSITION AND METHOD OF USE
(FR) COMPOSITION D'ELIMINATION DE RESIDU POST-CMP A FAIBLE pH ET PROCEDE D'UTILISATION
Abstract: front page image
(EN)An acidic composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The acidic composition includes surfactant, dispersing agent, sulfonic acid-containing hydrocarbon, and water. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
(FR)La présente invention concerne une composition acide et un procédé de nettoyage d'un résidu post-polissage chimico-mécanique (CMP) et de contaminants à partir d'un dispositif microélectronique comportant ledit résidu et lesdits contaminants sur celui-ci. La composition acide comprend un agent tensioactif, un agent de dispersion, un hydrocarbure contenant de l'acide sulfonique et de l'eau. La composition obtient un nettoyage très efficace du résidu post-CMP et du matériau contaminant à partir de la surface du dispositif microélectronique sans compromettre le matériau diélectrique à faible k ou le matériau d'interconnexion en cuivre.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)