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1. WO2007091971 - MULTIPLE MAGNETO-RESISTANCE DEVICES BASED ON DOPED MAGNESIUM OXIDE

Publication Number WO/2007/091971
Publication Date 16.08.2007
International Application No. PCT/SE2007/050078
International Filing Date 08.02.2007
IPC
H01F 10/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
G01R 33/09 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
09Magneto-resistive devices
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
CPC
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
G01R 33/093
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
09Magnetoresistive devices
093using multilayer structures, e.g. giant magnetoresistance sensors
G11C 11/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
G11C 11/1659
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1659Cell access
H01F 10/3254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3254the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Applicants
  • KORENIVSKI, Vladislav [SE]/[SE]
Inventors
  • KORENIVSKI, Vladislav
Agents
  • DR LUDWIG BRANN PATENTBYRÅ AB
Priority Data
0600305-710.02.2006SE
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MULTIPLE MAGNETO-RESISTANCE DEVICES BASED ON DOPED MAGNESIUM OXIDE
(FR) DIFFÉRENTS DISPOSITIFS MAGNÉTO RÉSISTANTS À BASE DE MAGNÉSIUM DOPÉ
Abstract
(EN)
The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention provides a three terminal logic device with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.
(FR)
L'invention porte sur un dispositif à faible résistance et forte magnétorésistance (MR) comprenant une jonction de deux éléments magnétiques séparés par une couche de MgO dopée par des métaux tels que Al et Li. On peut les utiliser comme détecteurs de champ magnétique pour l'enregistrement magnétique ou comme éléments de stockage dans des MRAM (mémoires magnétiques à accès aléatoire). Ces dispositifs à forte MR, à fonction de diode, comportent une double jonction de deux éléments magnétiques extérieurs séparés par deux couches isolantes de MgO et une couche centrale de MgO dopée par des métaux tels que Al et Li. De tels dispositifs présentent des avantages de conception lorsqu'utilisés en tant qu'éléments de stockage dans des MRAM. L'invention porte également sur un dispositif logique à trois bornes et à MR où une électrode de grille est placée en contact physique ou électrique avec la couche centrale d'une double jonction tunnel.
Also published as
Latest bibliographic data on file with the International Bureau