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1. WO2007091653 - NITRIDE SEMICONDUCTOR DEVICE

Publication Number WO/2007/091653
Publication Date 16.08.2007
International Application No. PCT/JP2007/052266
International Filing Date 08.02.2007
IPC
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/06 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01S 5/343 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
CPC
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
H01L 21/02458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02455Group 13/15 materials
02458Nitrides
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01L 21/02573
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
02573Conductivity type
H01L 21/0262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
0262Reduction or decomposition of gaseous compounds, e.g. CVD
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
Applicants
  • ローム株式会社 ROHM CO., LTD. [JP]/[JP] (AllExceptUS)
  • 園部 雅之 SONOBE, Masayuki [JP]/[JP] (UsOnly)
  • 伊藤 範和 ITO, Norikazu [JP]/[JP] (UsOnly)
  • 堤 一陽 TSUTSUMI, Kazuaki [JP]/[JP] (UsOnly)
  • 藤原 徹也 FUJIWARA, Tetsuya [JP]/[JP] (UsOnly)
Inventors
  • 園部 雅之 SONOBE, Masayuki
  • 伊藤 範和 ITO, Norikazu
  • 堤 一陽 TSUTSUMI, Kazuaki
  • 藤原 徹也 FUJIWARA, Tetsuya
Agents
  • 三好 秀和 MIYOSHI, Hidekazu
Priority Data
2006-03291709.02.2006JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) NITRIDE SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR AU NITRURE
(JA) 窒化物系半導体素子
Abstract
(EN)
Disclosed is a nitride semiconductor device comprising an n-GaN layer (103), an active layer (104) formed on the n-GaN layer (103), a first AlGaN layer (105) which is doped with Mg at a doping concentration of from 5 × 1019 to 2 × 1020 pieces/cm3 and formed on the active layer (104) at a growth temperature of 900-1200˚C, a second AlGaN layer (106) which is formed on the first AlGaN layer (105) at a growth temperature of 900-1200˚, and a p-GaN layer (107) formed on the second AlGaN layer (106).
(FR)
La présente invention concerne un dispositif semi-conducteur au nitrure comprenant une couche de GaN (103) de type n, une couche active (104) disposée sur la couche de GaN (103) de type n, une première couche d'AlGaN (105) qui est dopée avec du Mg à une concentration de dopage comprise entre 5 × 1019 et 2 × 1020 éléments/cm3 et est disposée sur la couche active (104) à une température de croissance de 900-1200°C, une seconde couche d'AlGaN (106) qui est disposée sur la première couche d'AlGaN (105) à une température de croissance de 900-1200°C, et une couche de GaN (107) de type p disposée sur la seconde couche d'AlGaN (106).
(JA)
 窒化物系半導体素子は、n-GaN層103と、n-GaN層103上に形成された活性層104と、活性層104上に、ドーピング濃度5×1019~2×1020個/cm3でMgをドーピングし、900~1200°Cの範囲の成長温度で形成された第1のAlGaN層105と、第1のAlGaN層105上に、900~1200°Cの範囲の成長温度で形成された第2のAlGaN層106と、第2のAlGaN層106上に形成された、p-GaN層107とを備える。
Also published as
Latest bibliographic data on file with the International Bureau