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1. (WO2007091155) A METHOD FOR LASER TREATMENT OF IMPLANTABLE DEVICES, IMPLANTABLE DEVICES OBTAINED USING SAID METHOD, AND A LASER SYSTEM FOR TREATMENT OF IMPLANTABLE DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/091155    International Application No.:    PCT/IB2007/000295
Publication Date: 16.08.2007 International Filing Date: 08.02.2007
IPC:
A61F 2/30 (2006.01), B23K 26/38 (2006.01), A61C 13/00 (2006.01)
Applicants: R.T.M. S.P.A. [IT/IT]; Via Circonvallazione, 7, I-10080 Vico Canavese (IT) (For All Designated States Except US).
GEASS S.R.L. [IT/IT]; Via Madonna della Salute, 23, I-33050 Pozzuolo del Friuli (IT) (For All Designated States Except US).
GALLUS, Enrico [IT/IT]; (IT) (For US Only).
DI NARDA, Francesca [IT/IT]; (IT) (For US Only).
D'ANTUONI, Domenico [IT/IT]; (IT) (For US Only)
Inventors: GALLUS, Enrico; (IT).
DI NARDA, Francesca; (IT).
D'ANTUONI, Domenico; (IT)
Agent: JORIO, Paolo; c/o Studio Torta S.r.l., Via Viotti, 9, I-10121 Torino (IT)
Priority Data:
TO2006A000089 08.02.2006 IT
Title (EN) A METHOD FOR LASER TREATMENT OF IMPLANTABLE DEVICES, IMPLANTABLE DEVICES OBTAINED USING SAID METHOD, AND A LASER SYSTEM FOR TREATMENT OF IMPLANTABLE DEVICES
(FR) PROCEDE POUR LE TRAITEMENT AU LASER DE DISPOSITIFS IMPLANTABLES, DISPOSITIFS IMPLANTABLES OBTENUS EN UTILISANT LEDIT PROCEDE ET SYSTEME LASER POUR LE TRAITEMENT DE DISPOSITIFS IMPLANTABLES
Abstract: front page image
(EN)Method for the laser treatment of implantable devices comprising the step of treating a surface of the implantable device (1) via a diode-pumped solid-state laser (DPSS) in Q-switch regime for creating on the device itself a surface morphology comprising a controlled distribution of pores (5) having a diameter and depth of between 3 and 150 µm and preferably 5-20 µm, and a pitch of between 5 and 300 µm and preferably between 10 and 30 µm.
(FR)La présente invention concerne un procédé pour le traitement au laser de dispositifs implantables comprenant l'étape consistant à traiter une surface du dispositif implantable (1) par le biais d'un laser à solide à pompage par diode (DPSS) dans un régime de laser déclenché afin de créer sur le dispositif même une morphologie de surface comprenant une distribution contrôlée de pores (5) ayant un diamètre et une profondeur compris entre 3 et 150 µm et préférablement de 5 à 20 µm, et un pas compris entre 5 et 300 µm et préférablement entre 10 et 30 µm.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: Italian (IT)