Processing

Please wait...

Settings

Settings

Goto Application

1. WO2007091031 - IMAGE SENSOR COMPRISING A PHOTOSENSITIVE DENDRIMER

Publication Number WO/2007/091031
Publication Date 16.08.2007
International Application No. PCT/GB2007/000386
International Filing Date 05.02.2007
IPC
H01L 27/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
CPC
H01L 27/14609
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/307
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
305Devices controlled by radiation
307Imager structures
H01L 51/0095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0095Starburst compounds
H01L 51/4206
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
4206Metal-organic semiconductor-metal devices
Applicants
  • ISIS INNOVATION LIMITED [GB]/[GB] (AllExceptUS)
  • BURN, Paul, Leslie [AU]/[GB] (UsOnly)
  • COLLINS, Stephen [GB]/[GB] (UsOnly)
Inventors
  • BURN, Paul, Leslie
  • COLLINS, Stephen
Agents
  • BARKER BRETTELL LLP
Priority Data
0602347.706.02.2006GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) IMAGE SENSOR COMPRISING A PHOTOSENSITIVE DENDRIMER
(FR) CAPTEUR D'IMAGE
Abstract
(EN)
An image sensor comprises an array of photodiodes, each photodiode comprising a photo-sensitive material including a dendrimer arranged to receive incident light. The photodiodes may be separate or may be regions of a layer of photo-sensitive material. In respect of each photodiode, a first electrode and a second electrode is disposed on opposite sides of the respective photodiode to receive a photo-current from the photodiode. A MOS circuit layer is disposed under the photodiodes of photo-sensitive material. The MOS circuit provides detection circuits connected to the electrodes to detect the photo-currents. Use of a dendrimer provides the benefits of availability of desired properties to sensors. By provision of the dendrimer over the MOS circuit layer, the area of the pixel can be increased as compared to MOS pixel for a given resolution.
(FR)
La présente invention concerne un capteur d'image qui comprend une matrice de photodiodes, chaque photodiode comprenant un matériau photosensible comprenant un dendrimère afin de recevoir une lumière incidente. Les photodiodes peuvent être séparées ou peuvent être des régions d'une couche de matériau photosensible. Par rapport à chaque photodiode, une première électrode et une seconde électrode sont disposées sur des côtés opposés de la photodiode respective afin de recevoir un photocourant provenant de la photodiode. Une couche à circuit MOS est disposée sous les photodiodes de matériau photosensible. Le circuit MOS prévoit des circuits de détection connectés aux électrodes afin de détecter les photocourants. L'utilisation d'un dendrimère fournit aux capteurs les bénéfices de la disponibilité de propriétés désirées. Par la mise à disposition du dendrimère sur la couche à circuit MOS, l'étendue du pixel peut être accrue par rapport à un pixel MOS pour une résolution donnée.
Latest bibliographic data on file with the International Bureau