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Machine translation
1. (WO2007090648) MEMORY HAVING NANOTUBE TRANSISTOR ACCESS DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/090648    International Application No.:    PCT/EP2007/001086
Publication Date: 16.08.2007 International Filing Date: 08.02.2007
Chapter 2 Demand Filed:    07.12.2007    
IPC:
G11C 13/02 (2006.01)
Applicants: QIMONDA AG [DE/DE]; Gustav-Heinemann-Ring 212, 81739 München (DE) (For All Designated States Except US).
KAKOSCHKE, Ronald [DE/DE]; (DE) (For US Only).
NIRSCHL, Thomas [DE/US]; (US) (For US Only)
Inventors: KAKOSCHKE, Ronald; (DE).
NIRSCHL, Thomas; (US)
Agent: JEHLE, Volker; Bosch Graf Von Stosch Jehle, Flüggenstr. 13, 80639 München (DE)
Priority Data:
11/350,191 08.02.2006 US
Title (EN) MEMORY HAVING NANOTUBE TRANSISTOR ACCESS DEVICE
(FR) MÉMOIRE COMPORTANT UN DISPOSITIF D'ACCÈS À TRANSISTOR EN NANOTUBE
Abstract: front page image
(EN)A memory cell includes a memory dement and a nanotube transistor contacting the memory element for accessing the memory dement.
(FR)La mémoire selon l'invention comporte un élément de mémoire et un transistor en nanotube en contact avec l'élément de mémoire servant à accéder à l'élément de mémoire.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)